Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Metin Ayata"'
Publikováno v:
IEEE Electron Device Letters. 35:998-1000
The noise performance of an InP BiCMOS process is presented. The process builds on IBM 90-nm RF CMOS and features heterogeneously integrated 250-nm InP DHBTs with f t /fmax values of ~300 GHz. Noise models have been extracted and the predicted perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf520c26526f16dc6d13b1af5d964c80
https://doi.org/10.1109/led.2014.2343942
https://doi.org/10.1109/led.2014.2343942
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The broadband noise performance of silicon ger- manium (SiGe) and compound semiconductor (CS) heterojunc- tion bipolar transistors (HBTs) is presented. The key noise mechanisms in HBTs are summarized to provide a framework through which the noise lim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eaaba1945bea4bb14df7b2d5be480ab
https://doi.org/10.1109/bctm.2014.6981277
https://doi.org/10.1109/bctm.2014.6981277