Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Metallisierungsschicht"'
Publikováno v:
8th International Conference on Solid-State and Integrated Circuit Technology 2006 (ICSICT '06), Oct. 23-26, 2006, Shanghai, China. Proceedings, p. 2184-2186
Spectroscopic ellipsometry is emerging as a routine tool for in-situ and ex-situ thin-film characterization in semiconductor manufacturing. For interconnects in ULSI circuits, diffusion barriers of below 10 nm thickness are required and precise thic
Autor:
Waechtler, Thomas, Oswald, Steffen, Roth, Nina, Jakob, Alexander, Lang, Heinrich, Ecke, Ramona, Schulz, Stefan E., Gessner, Thomas, Moskvinova, Anastasia, Schulze, Steffen, Hietschold, Michael
Publikováno v:
Journal of The Electrochemical Society, Vol. 156, No. 6, pp. H453-H459 (2009); Digital Object Identifier (DOI): 10.1149/1.3110842
The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(nBu3P)2Cu(acac)], and wet O2 on Ta, TaN, Ru and SiO2 substrates at temperatures of < 16
Autor:
Dhakal, Dileep
Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization
Autor:
Dhakal, Dileep
Atomic layer deposition (ALD) of copper films is getting enormous interest. Ultrathin Cu films are applied as the seed layer for electrochemical deposition (ECD) of copper in interconnect circuits and as the non-magnetic material for the realization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::61b26dd69f26aadcdf98894fdbc9ba8a
http://monarch.qucosa.de/api/qucosa:20800/attachment/ATT-0/
http://monarch.qucosa.de/api/qucosa:20800/attachment/ATT-0/
Autor:
Melzer, Marcel, Waechtler, Thomas, Müller, Steve, Fiedler, Holger, Hermann, Sascha, Rodriguez, Raul D., Villabona, Alexander, Sendzik, Andrea, Mothes, Robert, Schulz, Stefan E., Zahn, Dietrich R.T., Hietschold, Michael, Lang, Heinrich, Gessner, Thomas
Publikováno v:
Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026
The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Z
Autor:
Thomas Gessner, Holger Fiedler, Heinrich Lang, Sascha Hermann, Andrea Sendzik, Alexander Villabona, Marcel Melzer, Steve MüLler, Thomas Waechtler, Robert Mothes, Dietrich R. T. Zahn, Michael Hietschold, Stefan E. Schulz, Raul D. Rodriguez
Publikováno v:
Microelectron. Eng. 107, 223-228 (2013). Digital Object Identifier: 10.1016/j.mee.2012.10.026
The following is the accepted manuscript of the original article: Marcel Melzer, Thomas Waechtler, Steve Müller, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::016194155f04635c6859defe4b274da0
https://monarch.qucosa.de/id/qucosa:19886
https://monarch.qucosa.de/id/qucosa:19886
Autor:
Melzer, Marcel
Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that the decoration of CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu instead of the currently used SiO2 can enha
Autor:
Wächtler, Thomas
Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several
Autor:
EPCOS AG, München
Ill., graph. Darst.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc43d6ff3bd09614d014fc907361a965
Autor:
Wächtler, Thomas
Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______218::c70bc7e351739e39b4f0719c08596d44
https://monarch.qucosa.de/id/qucosa:19323
https://monarch.qucosa.de/id/qucosa:19323