Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Metal oxide semiconductors-Design and construction."'
Autor:
Shengkai Wang, Xiaolei Wang
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, il
Publikováno v:
IndraStra Global.
In this thesis the design of low-voltage, low-power, wide-band CMOS LC VCO using active inductor has been proposed. The oscillator is based upon the classic LC-tuned negative-resistance topology, with a novel active inductor using a low-voltage gyrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::822a6bbb57e6c632dc2c6390657ffbb9
http://drsr.daiict.ac.in/handle/123456789/191
http://drsr.daiict.ac.in/handle/123456789/191
