Zobrazeno 1 - 1
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pro vyhledávání: '"Metal Oxide Semiconductors - Silicon Interfaces"'
Autor:
Kumar, Arvind
The continuous downscaling has enforced the device size and oxide thickness to few nanometers. After serving for several decades as an excellent gate oxide layer in complementary metal oxide semiconductor (CMOS) devices, the thickness of SiO2 layer h
Externí odkaz:
http://etd.iisc.ernet.in/2005/3820
http://etd.iisc.ernet.in/abstracts/4691/G28261-Abs.pdf
http://etd.iisc.ernet.in/abstracts/4691/G28261-Abs.pdf
