Aerotaxy: gas-phase epitaxy of quasi 1D nanostructures.

Autor: Sivakumar S; Solid State Physics, Lund University, Box 118, 221 00, Lund, Sweden.; NanoLund, Lund University, 22100, Lund, Sweden., Persson AR; NanoLund, Lund University, 22100, Lund, Sweden.; Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden.; National Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100, Lund, Sweden., Metaferia W; National Renewable Energy Laboratory, Golden, CO 80401, United States of America., Heurlin M; Solid State Physics, Lund University, Box 118, 221 00, Lund, Sweden.; NanoLund, Lund University, 22100, Lund, Sweden., Wallenberg R; NanoLund, Lund University, 22100, Lund, Sweden.; Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden.; National Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100, Lund, Sweden., Samuelson L; Solid State Physics, Lund University, Box 118, 221 00, Lund, Sweden.; NanoLund, Lund University, 22100, Lund, Sweden., Deppert K; Solid State Physics, Lund University, Box 118, 221 00, Lund, Sweden.; NanoLund, Lund University, 22100, Lund, Sweden., Johansson J; Solid State Physics, Lund University, Box 118, 221 00, Lund, Sweden.; NanoLund, Lund University, 22100, Lund, Sweden., Magnusson MH; Solid State Physics, Lund University, Box 118, 221 00, Lund, Sweden.; NanoLund, Lund University, 22100, Lund, Sweden.

Publikováno v: Nanotechnology [Nanotechnology] 2021 Jan 08; Vol. 32 (2), pp. 025605.

Hot-Carrier Extraction in Nanowire-Nanoantenna Photovoltaic Devices.

Autor: Chen IJ; NanoLund and Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden., Limpert S; NanoLund and Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden., Metaferia W; NanoLund and Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden.; National Renewable Energy Laboratory, Golden, Colorado 80401, United States., Thelander C; NanoLund and Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden., Samuelson L; NanoLund and Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden., Capasso F; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States., Burke AM; NanoLund and Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden., Linke H; NanoLund and Solid State Physics, Lund University, Box 118, SE-22100 Lund, Sweden.

Publikováno v: Nano letters [Nano Lett] 2020 Jun 10; Vol. 20 (6), pp. 4064-4072. Date of Electronic Publication: 2020 Jun 01.

Direct Heterojunction of Polycrystalline InP/Si by Hydride Vapor Phase Epitaxy for Photovoltaic Application

Autor: Sun, Y.T., Metaferia, W., Lourdudoss, S.

28th European Photovoltaic Solar Energy Conference and Exhibition; 437-440
The direct heterojunction of polycrystalline InP on (001) and (111) silicon substrates was realized by indium assisted heteroepitaxy in a hydride vapor phase epitaxy syst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4720bc2bc372be4cb028e23f73566498

Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h ^-1 by hydride vapor phase epitaxy.

Autor: Metaferia W; National Renewable Energy Laboratory, Golden, CO, 80401, USA. Wondwosen.metaferia@nrel.gov., Schulte KL; National Renewable Energy Laboratory, Golden, CO, 80401, USA., Simon J; National Renewable Energy Laboratory, Golden, CO, 80401, USA., Johnston S; National Renewable Energy Laboratory, Golden, CO, 80401, USA., Ptak AJ; National Renewable Energy Laboratory, Golden, CO, 80401, USA. aaron.ptak@nrel.gov.

Publikováno v: Nature communications [Nat Commun] 2019 Sep 03; Vol. 10 (1), pp. 4070. Date of Electronic Publication: 2019 Sep 03.

Towards a monolithically integrated III-V laser on silicon: optimization of multi-quantum well growth on InP on Si.

Autor: Kataria, H., Junesand, C., Wang, Z., Metaferia, W., Sun, Y. T., Lourdudoss, S., Patriarche, G., Bazin, A., Raineri, F., Mages, P., Julian, N., Bowers, J. E.

Publikováno v: Semiconductor Science & Technology; 2013, Vol. 28 Issue 9, p1-7, 7p