Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Meshal Alawein"'
Autor:
Meshal Alawein, Hossein Fariborzi
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 60-68 (2018)
In this paper, we develop circuit models for spintronic devices that are under the application of electric and magnetic fields. Starting from time-dependent drift-diffusion equations in nonmagnets and ferromagnets, we spatially and temporally discret
Externí odkaz:
https://doaj.org/article/7f4153e5e1d345ab8f21d3043364a5d7
Autor:
Idris A. Ajia, Nasir Alfaraj, Wael Alghamdi, Davide Priante, Iman S. Roqan, Xiaohang Li, Haiding Sun, Meshal Alawein, Boon S. Ooi, Bilal Janjua, Tien Khee Ng
Publikováno v:
ACS Applied Electronic Materials. 2:409-418
The degree of enhancement in radiative recombination in ensembles of semiconductor nanowires after chemical treatment is quantified within a derived limit by correlating the energy released during ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d86cba77e9a6093dfe190851276b097
https://doi.org/10.1021/acsaelm.9b00578
https://doi.org/10.1021/acsaelm.9b00578
Publikováno v:
IEEE Magnetics Letters. 10:1-5
We examine a multistate logic computation scheme based on nanomagnets with configurational anisotropy (CA). We present a case study of a structure comprising a thin equilateral triangle—exhibiting sixfold CA—and three surrounding bistable inputs/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee7bd7fed43912cf67a9a3a190ec6cb7
https://doi.org/10.1109/lmag.2019.2899819
https://doi.org/10.1109/lmag.2019.2899819
Publikováno v:
ECS Transactions. 77:1971-1976
We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::183abe5fc8f181eef159bbddf4a73379
https://doi.org/10.1149/07711.1971ecst
https://doi.org/10.1149/07711.1971ecst
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
We report the design, fabrication and measurement of a spin-orbit torque (SOT) driven multi-state memory. The multi-state memory is based on a 3-nm thick Ni 81 Fe 19 (Py) patterned in the shape of four intersecting ellipses (octagram). Writing is per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c937fc11888abb2e78f675620197a5c2
https://doi.org/10.1109/edtm.2019.8731027
https://doi.org/10.1109/edtm.2019.8731027
Autor:
Hossein Fariborzi, Meshal Alawein
Publikováno v:
Procedia Engineering. 168:966-970
In this work we propose a finite-difference scheme based circuit model of a general spintronic device and benchmark it with other models proposed for spintronic switching devices. Our model is based on the four-component spin circuit theory and utili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ae497ec9b5329a7a07e09e17eb6d75b
https://doi.org/10.1016/j.proeng.2016.11.317
https://doi.org/10.1016/j.proeng.2016.11.317
Autor:
Jurgen Kosel, Xixiang Zhang, Hossein Fariborzi, Selma Amara, Ride Bu, Yan Wen, Mohammed Asadullah Khan, Meshal Alawein, Nouf Alsharif
Publikováno v:
MeMeA
Flow cytometers are important instruments for biological and biomedical analyses. These instruments are large and expensive, and researchers are continuously striving to come up with smaller, cheaper, and more energy-efficient flow cytometers. In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24502c1406a943b11f69425dbac075d
https://doi.org/10.1109/memea.2018.8438652
https://doi.org/10.1109/memea.2018.8438652
Publikováno v:
2018 IEEE International Magnetics Conference (INTERMAG).
Since the discovery of the giant magnetoresistance (GMR), many spintronic devices have been developed and used in various applications such as information storage and automotive industry. Nowadays, increasing research in the field of spintronics and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b49837c1fb02bd4808c00f764111363e
https://doi.org/10.1109/intmag.2018.8508528
https://doi.org/10.1109/intmag.2018.8508528
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
In this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO 2 ) based dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3193d3547de2a1e53a88b3eda495ef63
https://doi.org/10.1109/edtm.2018.8421452
https://doi.org/10.1109/edtm.2018.8421452
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f444f6a154eedbce0437c7a477ea7721
https://doi.org/10.1109/edtm.2018.8421415
https://doi.org/10.1109/edtm.2018.8421415