Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Mesfet integrated circuits"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:1024-1029
A 1.1-GHz fully integrated GaAs MESFET active inductor is presented in this paper. Both the inductance and loss resistance are tunable with the inductance independent of series loss tuning. The measured loss resistance is tunable over a -10- to +15-/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd8205f45167e061a2d2ce0c105980d6
https://doi.org/10.1109/22.904740
https://doi.org/10.1109/22.904740
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 48:2554-2559
We present two novel dc-offset cancellation techniques for antiparallel diode pair even-harmonic mixers in a direct conversion receiver. Using fundamental equations, we describe the contribution of diode mismatch to dc offset and present an intrinsic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61bfedc92aeb94c7706a184ba3eb2d3d
https://doi.org/10.1109/22.899012
https://doi.org/10.1109/22.899012
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 50:1433-1435
In this paper, a balanced 27 GHz common-gate downconvert mixer is presented. The common-gate configuration allows 0.8 /spl mu/m MESFETs to be used at frequencies in excess of those practical for the common-source configuration. Measurements indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6627ac9d4a168724c350fb026fd50bfa
https://doi.org/10.1109/22.999160
https://doi.org/10.1109/22.999160
Publikováno v:
Microelectronic Engineering. 19:207-210
Two advanced processes for opto-electronic integration on InP, nl. heteroepitaxial growth and epitaxial lift-off, are described. Both are based on the well developed GaAs MESFET technology implemented on InP and have promising advantages compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31da01cc90722c0ddbe84bf3e1a79d8d
https://doi.org/10.1016/0167-9317(92)90424-p
https://doi.org/10.1016/0167-9317(92)90424-p
Publikováno v:
International Journal of Electronics. 68:721-728
A simple model is presented for the negative drain current transients observed in GaAs MESFETs when subjected to ionizing radiation. The two dominant mechanisms are proposed to be electron trapping under the Schottky gate and in the neutral semi-insu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a65ca538edee61fb7848eeb4e1fb42e
https://doi.org/10.1080/00207219008921214
https://doi.org/10.1080/00207219008921214
Publikováno v:
IEEE Photonics Technology Letters. 10:227-229
A crosspoint switch was developed that has an interface for serial optical interconnection. By using optoelectronic devices, cascaded switching was achieved through serial optical interconnection up to a bit rate of 10 Gb/s.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99cf6a9f8ce08016c1d498e37cccc584
https://doi.org/10.1109/68.655366
https://doi.org/10.1109/68.655366
Publikováno v:
SBMO/IEEE MTT-S International Conference on Microwave and Optoelectronics, 2005..
This paper presents a fully-integrated dual-standard BiFET low noise amplifier (LNA) targeted to DCS1800 (1805-1880 MHz) and WCDMA-FDD (2110-2170 MHz) systems applications. It uses a high performance 0.25-/spl mu/m SiGe:C BiCMOS7RF integration techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c005c4f619b7ca03a74450f604af002
https://doi.org/10.1109/imoc.2005.1580057
https://doi.org/10.1109/imoc.2005.1580057
Publikováno v:
Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.
In this paper, a novel gallium arsenide MESFET structure suitable for high-voltage, high-speed output drivers is proposed and implemented. The device uses an extended drain region and a two-step gate field plate structure to achieve high breakdown vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe4d108c37a19e2b160390da9ae1af5
https://doi.org/10.1109/ispsd.1992.991293
https://doi.org/10.1109/ispsd.1992.991293
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4999126ab6688fbf7db38960fe1eaadf
https://doi.org/10.1109/leosst.1995.764161
https://doi.org/10.1109/leosst.1995.764161
Autor:
T.M. Smith
Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
This paper describes TriQuint's yield improvement efforts and results for our ion implanted, recessed-gate, MESFET IC processes. It discusses how we approached fab line yield improvement, the techniques that were utilized, some of the lessons learned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d952c545a086ac6e44d69af38f1c66a1
https://doi.org/10.1109/gaas.1994.636943
https://doi.org/10.1109/gaas.1994.636943