Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Merve Pinar. Kabukcuoglu"'
Autor:
Jiaona Zou, Alex Fauler, Alexander S. Senchenkov, Nikolai N. Kolesnikov, Lutz Kirste, Merve Pinar. Kabukcuoglu, Elias Hamann, Angelica Cecilia, Michael Fiederle
Publikováno v:
Crystals, Vol 11, Iss 11, p 1402 (2021)
Structural defects and compositional uniformity remain the major problems affecting the performance of (Cd, Zn)Te (CZT) based detector devices. Understanding the mechanism of growth and defect formation is therefore fundamental to improving the cryst
Externí odkaz:
https://doaj.org/article/ed74b1005e034de89ad0a440b64623cf
Autor:
Alexander S. Senchenkov, Lutz Kirste, N. N. Kolesnikov, Merve Pinar. Kabukcuoglu, Angelica Cecilia, E. Hamann, Alex Fauler, Jiaona Zou, Michael Fiederle
Publikováno v:
Crystals, 11 (11), Article no: 1402
Crystals, Vol 11, Iss 1402, p 1402 (2021)
Crystals
Volume 11
Issue 11
Crystals, Vol 11, Iss 1402, p 1402 (2021)
Crystals
Volume 11
Issue 11
Structural defects and compositional uniformity remain the major problems affecting the performance of (Cd, Zn)Te (CZT) based detector devices. Understanding the mechanism of growth and defect formation is therefore fundamental to improving the cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad91bd2979aab59b9c125fe3cc809c11
https://publikationen.bibliothek.kit.edu/1000140170/133376010
https://publikationen.bibliothek.kit.edu/1000140170/133376010
Autor:
Mehmet Parlak, Yasin Ergunt, Bengisu Yasar, Rasit Turan, Y.E. Kalay, Merve Pinar Kabukcuoglu, Ozden Basar Balbasi
Publikováno v:
RAP 2019 Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed981100240fd17dbc233af20150d908
https://doi.org/10.37392/rapproc.2019.34
https://doi.org/10.37392/rapproc.2019.34
Autor:
Deniz Bender, Yasin Ergunt, Rasit Turan, Mustafa Ünal, Ozden Basar Balbasi, Merve Pinar Kabukcuoglu
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX.
Cadmium Zinc Telluride (CdZnTe) is a good candidate for detection of x-ray and gamma-rays due to its high atomic number and large bandgap. CdZnTe is a II-VI group semiconductor and by changing ZnTe concentration, its properties can be altered. CdZnTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::743ad2c95f33b2eee0fa7c154c9ef7c0
https://doi.org/10.1117/12.2323097
https://doi.org/10.1117/12.2323097
Autor:
Merve Pinar Kabukcuoglu, Ozden Basar Balbasi, Rasit Turan, Mehmet Parlak, Mustafa Ünal, Çiğdem Doğru, Yasin Ergunt
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX.
Cadmium Zinc Telluride (CD1-xZnxTe has become a crucial material for x-ray and gamma ray detection due to its wide band-gap, high atomic number and high density, which offer high efficiency and sharp spectroscopic resolution at room temperature. In a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::785fd19838e52449e3444b31a6ac4467
https://doi.org/10.1117/12.2323409
https://doi.org/10.1117/12.2323409
In recent years, CdZnTe has attracted much attention due to its superior electrical and structural properties for room-temperature operable gamma and x-ray detectors. However, CdZnTe (CZT) material has often suffered from crystallographic defects enc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e06c9254dff655f6942daf49c15d32e
https://aperta.ulakbim.gov.tr/record/34993
https://aperta.ulakbim.gov.tr/record/34993