Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Merve Kabukcuoglu"'
Autor:
Melissa Roder, Johannes Steiner, Peter Wellmann, Merve Kabukcuoglu, Elias Hamann, Simon Haaga, Daniel Hänschke, Andreas Danilewsky
Publikováno v:
Journal of Applied Crystallography. 56:776-786
Two wafers of one 4H-silicon carbide (4H-SiC) bulk crystal, one cut from a longitudinal position close to the crystal's seed and the other close to the cap, were characterized with synchrotron white-beam X-ray topography (SWXRT) in back-reflection an
Autor:
Enrico Bagli, Valerio Bellucci, Vincenzo Guidi, Riccardo Camattari, A. Mazzolari, G. Cavoto, A. Sytov, Simon Haaga, Daniel Hänschke, Laura Bandiera, M. Romagnoni, Merve Kabukcuoglu, Simon Bode, Andreas N. Danilewsky, Tilo Baumbach
Publikováno v:
Journal of Applied Crystallography. 53:486-493
Bent crystals can be used to deflect high-energy charged particles for beam extraction and/or beam collimation at accelerator facilities, thanks to the channelling phenomenon. In the present paper, two perfect silicon mono-crystals were bent using tw
Autor:
Ernest Suvorov, Victor E. Asadchikov, Merve Kabukcuoglu, Simon Bode, Matthias Balzer, Simon Haaga, Tilo Baumbach, D. A. Zolotov, I. G. Dyachkova, Andreas N. Danilewsky, F. N. Chukhovskii, Daniel Hänschke, Alexey Buzmakov, Michele Caselle
Publikováno v:
Journal of Applied Crystallography. 51:1616-1622
This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventiona