Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Mertes, K."'
Autor:
Mertes, K. M., Merrill, J., Carretero-Gonzalez, R., Frantzeskakis, D. J., Kevrekidis, P. G., Hall, D. S.
Publikováno v:
Phys. Rev. Lett. 99 (2007) 190402
We revisit a classic study [D. S. Hall {\it et al.}, Phys. Rev. Lett. {\bf 81}, 1539 (1998)] of interpenetrating Bose-Einstein condensates in the hyperfine states $\ket{F = 1, m_f = -1}\equiv\ket{1}$ and $\ket{F = 2, m_f = +1}\equiv\ket{2}$ of ${}^{8
Externí odkaz:
http://arxiv.org/abs/0707.1205
Autor:
Avraham, Nurit, Stern, Ady, Suzuki, Yoko, Mertes, K. M., Sarachik, M. P., Zeldov, E., Myasoedov, Y., Shtrikman, H., Rumberger, E. M., Hendrickson, D. N., Chakov, N. E., Christou, G.
The spatial profile of the magnetization of Mn12 crystals in a swept magnetic field applied along the easy axis is determined from measurements of the local magnetic induction along the sample surface using an array of Hall sensors. We find that the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0505264
Autor:
Bal, M., Friedman, Jonathan R., Mertes, K., Chen, W., Rumberger, E. M., Hendrickson, D. N., Avraham, N., Myasoedov, Y., Shtrikman, H., Zeldov, E.
Publikováno v:
Phys. Rev. B 70, 140403(R) (2004)
We used a Josephson junction as a radiation detector to look for evidence of the emission of electromagnetic radiation during magnetization avalanches in a crystal assembly of Mn_12-Acetate. The crystal assembly exhibits avalanches at several magneti
Externí odkaz:
http://arxiv.org/abs/cond-mat/0406410
Autor:
Bal, M., Friedman, Jonathan R., Suzuki, Y., Mertes, K., Rumberger, E. M., Hendrickson, D. N., Myasoedov, Y., Shtrikman, H., Avraham, N., Zeldov, E.
Publikováno v:
Phys. Rev. B 70, 100408(R) (2004)
We use millimeter wave radiation to manipulate the populations of the energy levels of a single crystal molecular magnet Fe8. When a continuous wave radiation is in resonance with the transitions from the ground state to the first excited state, the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0404448
Autor:
Mertes, K. M., Suzuki, Yoko, Sarachik, M. P., Myasoedov, Y., Shtrikman, H., Zeldov, E., Rumberger, E. M., Hendrickson, D. N., Christou, G.
In magnetic fields applied parallel to the anisotropy axis, the magnetization of Mn$_{12}$ has been measured in response to a field that is swept back and forth across the resonances corresponding to steps $N=4,5,...9$. The fraction of molecules rema
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209110
Autor:
Mertes, K. M., Sarachik, M. P., Paltiel, Y., Shtrikman, H., Zeldov, E., Rumberger, E. M., Hendrickson, D. N., Christou, G.
We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$-acetate as a function of magnetic field applied along the easy axis of magnetization for a series of closely-spaced temperatures between 0.24 K and 1.9 K. We map out a region
Externí odkaz:
http://arxiv.org/abs/cond-mat/0108185
Autor:
Mertes, K. M., Suzuki, Yoko, Sarachik, M. P., Paltiel, Y., Shtrikman, H., Zeldov, E., Rumberger, E., Hendrickson, D. N., Christou, G.
In magnetic fields applied parallel to the anisotropy axis, the relaxation of the magnetization of Mn$_{12}$ measured for different sweep rates is shown to collapse onto a single scaled curve. The form of the scaling implies that the dominant symmetr
Externí odkaz:
http://arxiv.org/abs/cond-mat/0106579
Abrupt Transition between Thermally-Activated Relaxation and Quantum Tunneling in a Molecular Magnet
Autor:
Mertes, K. M., Zhong, Y., Sarachik, M. P., Paltiel, Y., Shtrikman, H., Zeldov, E., Rumberger, E., Hendrickson, D. N.
We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$ acetate as a function of magnetic field applied along the easy axis of magnetization. Data taken at a series of closely-spaced temperatures between 0.24 K and 1.4 K provide st
Externí odkaz:
http://arxiv.org/abs/cond-mat/0012247
For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter $H_{\sigma}(n,T)$, where $H
Externí odkaz:
http://arxiv.org/abs/cond-mat/0009454
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field above which
Externí odkaz:
http://arxiv.org/abs/cond-mat/0008456