Zobrazeno 1 - 10
of 320
pro vyhledávání: '"Meriles, Carlos A."'
Autor:
Xu, Kang, Pagliero, Daniela, Morales, Gabriel I. Lopez, Flick, Johannes, Wolcott, Abraham, Meriles, Carlos A.
Publikováno v:
ACS Appl. Mater. Interf. 16, 37226 (2024)
Thanks to its low or negative surface electron affinity and chemical inertness, diamond is attracting broad attention as a source material of solvated electrons produced by optical excitation of the solid-liquid interface. Unfortunately, its wide ban
Externí odkaz:
http://arxiv.org/abs/2407.15019
Autor:
Ziffer, Mark E., Machado, Francisco, Ursprung, Benedikt, Lozovoi, Artur, Tazi, Aya Batoul, Yuan, Zhiyang, Ziebel, Michael E., Delord, Tom, Zeng, Nanyu, Telford, Evan, Chica, Daniel G., deQuilettes, Dane W., Zhu, Xiaoyang, Hone, James C., Shepard, Kenneth L., Roy, Xavier, de Leon, Nathalie P., Davis, Emily J., Chatterjee, Shubhayu, Meriles, Carlos A., Owen, Jonathan S., Schuck, P. James, Pasupathy, Abhay N.
Low frequency critical fluctuations in magnetic materials encode important information about the physics of magnetic ordering, especially in the associated critical exponents. While a number of techniques have been established to study magnetic criti
Externí odkaz:
http://arxiv.org/abs/2407.05614
Quantum embedding study of strain and charge induced Stark effects on the NV$^{-}$ center in diamond
Autor:
López-Morales, Gabriel I., Zajac, Joanna M., Flick, Johannes, Meriles, Carlos A., Dreyer, Cyrus E.
The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we
Externí odkaz:
http://arxiv.org/abs/2406.07772
Autor:
Delord, Tom, Monge, Richard, Lopez-Morales, Gabriel, Bach, Olaf, Dreyer, Cyrus E., Flick, Johannes, Meriles, Carlos A.
The excited orbitals of color centers typically show stronger electric dipoles, which can serve as a resource for entanglement, emission tuning, or electric field sensing. Here, we use resonant laser excitation to expose strong transition dipoles in
Externí odkaz:
http://arxiv.org/abs/2405.16280
Publikováno v:
Nat. Nanotech. 19, 202 (2024)
Color centers in wide-bandgap semiconductors feature metastable charge states that can be interconverted with the help of optical excitation at select wavelengths. The distinct fluorescence and spin properties in each of these states have been exploi
Externí odkaz:
http://arxiv.org/abs/2402.11312
Publikováno v:
Phys. Rev. Lett. 131, 236901 (2023)
The last decade has seen an explosive growth in the use of color centers for metrology applications, the paradigm example arguably being the nitrogen-vacancy (NV) center in diamond. Here, we focus on the regime of cryogenic temperatures and examine t
Externí odkaz:
http://arxiv.org/abs/2312.02907
Publikováno v:
Adv. Quantum Tech. 2300098 (2023)
Extending the coherence lifetime of a qubit is central to the implementation and deployment of quantum technologies, particularly in the solid-state where various noise sources intrinsic to the material host play a limiting role. Here, we theoretical
Externí odkaz:
http://arxiv.org/abs/2306.17273
Autor:
Pigliapochi, Roberta, Pagliero, Daniela, Buljubasich, Lisandro, Lozovoi, Artur, Acosta, Rodolfo H., Zangara, Pablo R., Meriles, Carlos A.
Publikováno v:
Phys. Rev. B 107, 214202 (2023)
Nuclear spins and paramagnetic centers in a solid randomly group to form clusters featuring nearly-degenerate, hybrid states whose dynamics are central to processes involving nuclear spin-lattice relaxation and diffusion. Their characterization, howe
Externí odkaz:
http://arxiv.org/abs/2306.13193
Autor:
Chen, YunHeng, Oberg, Lachlan, Flick, Johannes, Lozovoi, Artur, Meriles, Carlos A., Doherty, Marcus W.
Publikováno v:
Phys. Rev. B 109, L201115 (2024)
A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the ab
Externí odkaz:
http://arxiv.org/abs/2306.12005
Autor:
Lozovoi, Artur, Chen, YunHeng, Vizkelethy, Gyorgy, Bielejec, Edward, Flick, Johannes, Doherty, Marcus W., Meriles, Carlos A.
Publikováno v:
Nano Lett. 23, 4495 (2023)
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investi
Externí odkaz:
http://arxiv.org/abs/2306.01572