Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Meriem Bouchilaoun"'
Autor:
Guillaume Gommé, Adrien Cutivet, Boussairi Bouzazi, Abderrahim Rahim Boucherif, Tom MacElwee, Christophe Rodriguez, Meriem Bouchilaoun, Hubert Pelletier, Philippe-Olivier Provost, Hassan Maher, Richard Ares
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, resp
Externí odkaz:
https://doaj.org/article/0e9fb26e01004e3ca334d6f8f0e0e218
Autor:
Gwen Rolland, Christophe Rodriguez, Guillaume Gommé, Abderrahim Boucherif, Ahmed Chakroun, Meriem Bouchilaoun, Marie Clara Pepin, Faissal El Hamidi, Soundos Maher, Richard Arès, Tom MacElwee, Hassan Maher
Publikováno v:
Energies, Vol 14, Iss 19, p 6098 (2021)
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simu
Externí odkaz:
https://doaj.org/article/3d3f7c5ffaf646209be4b4e0e58656ed
Autor:
Soundos Maher, Abderrahim Rahim Boucherif, Faissal El Hamidi, Guillaume Gommé, Richard Arès, Marie Clara Pepin, Meriem Bouchilaoun, Hassan Maher, Gwen Rolland, Ahmed Chakroun, Christophe Rodriguez, Tom MacElwee
Publikováno v:
Energies
Energies, MDPI, 2021, 14 (19), pp.6098. ⟨10.3390/en14196098⟩
Energies; Volume 14; Issue 19; Pages: 6098
Energies, Vol 14, Iss 6098, p 6098 (2021)
Energies, MDPI, 2021, 14 (19), pp.6098. ⟨10.3390/en14196098⟩
Energies; Volume 14; Issue 19; Pages: 6098
Energies, Vol 14, Iss 6098, p 6098 (2021)
International audience; In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::969fa8736886ddc258dbf52f2ece4c74
https://hal.archives-ouvertes.fr/hal-03358709
https://hal.archives-ouvertes.fr/hal-03358709
Autor:
Ali Soltani, Meriem Bouchilaoun, Samuel Graham, Georges Pavlidis, Hassan Maher, Christophe Rodriguez, Adrien Cutivet, Bilal Hassan, Francois Boone
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
International audience; Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal imp
Autor:
Adrien Cutivet, Francois Boone, Ali Soltani, Bilal Hassan, Meriem Bouchilaoun, Christophe Rodriguez, Hassan Maher
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
physica status solidi (a), 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
physica status solidi (a), Wiley, 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
physica status solidi (a), 2019, 216, pp.1800503. ⟨10.1002/pssa.201800503⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c2059cfcf56ccde197626ab58952be0
https://hal.archives-ouvertes.fr/hal-02273385
https://hal.archives-ouvertes.fr/hal-02273385
Autor:
Meriem Bouchilaoun, Hassan Maher, Ali Soltani, Bilal Hassan, Adrien Cutivet, Christophe Rodriguez, Francois Boone
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2018, pp.1800505. ⟨10.1002/pssa.201800505⟩
The coumpoud semiconductor week (CSW)
The coumpoud semiconductor week (CSW), May 2018, Boston, United States
physica status solidi (a), 2018, pp.1800505. ⟨10.1002/pssa.201800505⟩
physica status solidi (a), Wiley, 2018, pp.1800505. ⟨10.1002/pssa.201800505⟩
The coumpoud semiconductor week (CSW)
The coumpoud semiconductor week (CSW), May 2018, Boston, United States
physica status solidi (a), 2018, pp.1800505. ⟨10.1002/pssa.201800505⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0db3a79ca4502fe6a7731a84d8d0d731
https://hal.archives-ouvertes.fr/hal-02273403
https://hal.archives-ouvertes.fr/hal-02273403
Autor:
Adrien Cutivet, Abderrahim Rahim Boucherif, Meriem Bouchilaoun, Boussairi Bouzazi, Richard Arès, Hubert Pelletier, Hassan Maher, Christophe Rodriguez, Tom MacElwee, Philippe-Olivier Provost, Guillaume Gommé
Publikováno v:
AIP Advances
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (6), pp.065123. ⟨10.1063/1.5142615⟩
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (6), pp.065123. ⟨10.1063/1.5142615⟩
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, resp
Autor:
Maxime Darnon, Hassan Maher, Francois Boone, Meriem Bouchilaoun, Ali Soltani, Ahmed Chakroun, Abdelatif Jaouad
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2018, pp.1700658. ⟨10.1002/pssa.201700658⟩
physica status solidi (a), Wiley, 2018, pp.1700658. ⟨10.1002/pssa.201700658⟩
International audience; In this paper, the development of a soft and selective method to increase the etching rate and control accurately the etched thickness of Si3N4 material is reported. This technique combines the low damage characteristics of we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c55c443a076fdd3c89fbdee4871a797f
https://hal.archives-ouvertes.fr/hal-01760514
https://hal.archives-ouvertes.fr/hal-01760514
Autor:
Meriem Bouchilaoun, Ali Soltani, Hassan Maher, Christophe Rodriguez, Francois Boone, Abdelatif Jaouad, Adrien Cutivet, Ahmed Chakroun
Publikováno v:
physica status solidi (c)
physica status solidi (c), 2017, 14 (11), pp.1700225. ⟨10.1002/pssc.201700225⟩
physica status solidi (c), Wiley, 2017, 14 (11), pp.1700225. ⟨10.1002/pssc.201700225⟩
physica status solidi (c), 2017, 14 (11), pp.1700225. ⟨10.1002/pssc.201700225⟩
physica status solidi (c), Wiley, 2017, 14 (11), pp.1700225. ⟨10.1002/pssc.201700225⟩
International audience; Transistor's thermal impedance is a parameter of prime importance to predict the device peak temperature in applications of power and RF electronics featuring time-dependent dissipated power. In the context of the upcoming GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5c512ffef73bc271ff790666c929cb8
https://hal.science/hal-01918126
https://hal.science/hal-01918126
Autor:
Flavien Cozette, Jean-Claude De Jaeger, Adrien Cutivet, Meriem Bouchilaoun, Ahmed Chakroun, Hassan Maher, Marie Lesecq, Osvaldo Arenas, Abdelatif Jaouad, Francois Boone
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
IEEE Electron Device Letters, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
International audience; This paper reports on a new method for the characterization of transistors transient self-heating based on gate end-to-end resistance measurement. An alternative power signal is injected to the device output (between drain and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55dc06dc3e40e48b792d129f717117b5
https://hal.science/hal-01914376/document
https://hal.science/hal-01914376/document