Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Meredith Beebe"'
Autor:
Meredith Beebe, Scott Anderson
Publikováno v:
Microelectronic Engineering. 87:1701-1705
The importance of metal contamination in semiconductor processing and the ultimate yield effects has long been discussed in literature, the ITRS, and most importantly in the fab. Analysis methods including TXRF, VPD ICP-MS, and TOF-SIMS have been use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0fd5498e7f404d71e0f7faa4039a44f
https://doi.org/10.1016/j.mee.2009.11.057
https://doi.org/10.1016/j.mee.2009.11.057
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 59:1227-1234
The versatility of a total reflection X-ray fluorescence (TXRF) spectrometer in the analysis of semiconductor samples will be demonstrated. While TXRF has a well-established place in trace metals analysis on silicon wafers, the practice of characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04e6ad615b6a6bb2b471da8afb4ce86d
https://doi.org/10.1016/j.sab.2004.04.009
https://doi.org/10.1016/j.sab.2004.04.009
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 59:1117-1124
In this study, the nanoliter dried spot method was applied to semiconductor contamination analysis to enhance vapor phase decomposition processes with total reflection X-ray fluorescence detection. Nanoliter-sized droplets (10 and 50 nl) were deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1352c7e310fb52e3c4a588e24344b0f
https://doi.org/10.1016/j.sab.2003.11.010
https://doi.org/10.1016/j.sab.2003.11.010
Publikováno v:
Applied Surface Science. :565-568
SIMS depth profiles obtained from a B implanted Si sample capped with a thin HfO2 film revealed the presence of several artifacts that make it problematic to determine the distribution and concentration of elements in the underlying Si substrate. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7a4711bb1ffb8e98e53230da58012a
https://doi.org/10.1016/j.apsusc.2004.03.099
https://doi.org/10.1016/j.apsusc.2004.03.099
Publikováno v:
AIP Conference Proceedings.
The edge, bevel, and edge exclusion area of a wafer has historically been difficult to monitor for trace metals. Standard trace metal surface techniques such as total reflection x‐ray fluorescence spectroscopy, time‐of‐flight secondary ion mass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c01972eff9446e0cf8fa200da600582
https://doi.org/10.1063/1.1622487
https://doi.org/10.1063/1.1622487