Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Meoungwhan Cho"'
Publikováno v:
physica status solidi c. 8:2123-2126
Free-standing GaN thick films are successfully fabricated by employing intentional mechanical fracturing of Al2O3 substrates during HVPE growth followed by chemical lift-off of Al2O3 substrates after growth. To do so, thermal stress induced in the Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4a79ded7840f00a140ae21eeccabb12
https://doi.org/10.1002/pssc.201001026
https://doi.org/10.1002/pssc.201001026
Autor:
Soon-Ku Hong, Hyunjae Lee, Takafumi Kawauchi-jutaku Yao, Jun-Seok Ha, J.H. Chang, Chinkyo Kim, Seogwoo Lee, Meoungwhan Cho, Hyo-Jong Lee
Publikováno v:
Journal of the Korean Physical Society. 54:2404-2408
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78dc36e5278a36f017774c0ed682528
https://doi.org/10.3938/jkps.54.2404
https://doi.org/10.3938/jkps.54.2404
Publikováno v:
Journal of Electroceramics. 17:255-261
The ZnO-based oxide and GaN-based nitride semiconductors have been explored for applications to photonic devices in the UV wavelength region and high power electronic devices, where the control of crystal polarity is one of the key issues. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd21f2d51f665df0d7ee689853e320bf
https://doi.org/10.1007/s10832-006-7722-1
https://doi.org/10.1007/s10832-006-7722-1
Publikováno v:
physica status solidi c. 3:1388-1391
We propose a rocksalt (RS) structured chromium nitride (CrN) layer as a novel buffer for the growth of gallium nitride (GaN) films on c-sapphire substrate. A RS-CrN buffer has good advantages for growing GaN films on c-sapphire from the viewpoints of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38522df9eeeee22854642bec1bcb9369
https://doi.org/10.1002/pssc.200565410
https://doi.org/10.1002/pssc.200565410
Autor:
Takashi Hanada, Keesam Shin, Daisuke Shindo, Junghoon Yoo, Hisao Makino, Meoungwhan Cho, Takafumi Yao, Takahiro Mori, Young-Gil Park, Sungwook Joo
Publikováno v:
MATERIALS TRANSACTIONS. 47:1115-1120
Ordering of In and Ga in In 0.53 Ga 0.47 As films grown at 573 K, 673 K, and 773 K by molecular beam epitaxy was investigated by electron diffraction pattern analysis using a transmission electron microscope equipped with an Ω-filter and imaging pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d936eaba6fc52fad32259d7a4419601d
https://doi.org/10.2320/matertrans.47.1115
https://doi.org/10.2320/matertrans.47.1115
Autor:
R. Buckmaster, K. Shin, Yongzhao Yao, Takafumi Yao, Meoungwhan Cho, Yoshiyuki Kawazoe, Takenari Goto, J.H. Yoo, M. Yokoyama, Takashi Sekiguchi, Takashi Hanada
Publikováno v:
Microelectronics Journal. 36:456-459
By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO 2 . The fabrication method consists of implanting Ga ions into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c964c5f73b19ec066d351ced6e0ef5
https://doi.org/10.1016/j.mejo.2005.02.046
https://doi.org/10.1016/j.mejo.2005.02.046
Autor:
Chihiro Harada, H. J. Ko, Takafumi Yao, Hiroki Goto, Takuma Suzuki, Tsutomu Minegishi, Meoungwhan Cho, Agus Setiawan
Publikováno v:
Current Applied Physics. 4:643-646
We report on GaN growth on Zn-polar ZnO substrates using plasma-assisted molecular-beam epitaxy (P-MBE). Before GaN growth, ZnO substrate annealing conditions were optimized. Reflection high-energy electron diffraction (RHEED) patterns after low-temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5423c9848776f4a99fd9a983140042e2
https://doi.org/10.1016/j.cap.2004.01.039
https://doi.org/10.1016/j.cap.2004.01.039
Autor:
J. S. Song, Takafumi Yao, Meoungwhan Cho, J. J. Kim, D. C. Oh, Takashi Hanada, J.H. Chang, Hisao Makino
Publikováno v:
Journal of Crystal Growth. 249:128-143
We report growth optimization of molecular beam epitaxy (MBE) grown ZnSe on GaAs (0 0 1) substrate tilted by 15° toward [1 1 0] in terms of beam equivalent pressure (BEP) ratio and growth temperature. A LT-ZnSe buffer was grown to reduce the formati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ddcf9d99db5ea482857f4e722f0858
https://doi.org/10.1016/s0022-0248(02)02129-2
https://doi.org/10.1016/s0022-0248(02)02129-2
Autor:
Jun-Seok Ha, Seogwoo Lee, Kayo Koike, Hyo-Jong Lee, Hyun-Yong Lee, Takafumi Yao, Meoungwhan Cho, Jinsub Park, Soon-Ku Hong, Sung Ryong Cho
Publikováno v:
IEEE Photonics Technology Letters. 24:449-451
Four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were grown by metal-organic chemical vapor deposition. The position of the V-pits embedded in the layers of the LED structures was controlled by varying the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8554f783b109b3b0f9d4a8fc212b7ad6
https://doi.org/10.1109/lpt.2011.2180523
https://doi.org/10.1109/lpt.2011.2180523
Publikováno v:
Journal of Crystal Growth. 242:95-103
This article demonstrates the effect of the thin low-temperature-grown ZnSe buffer layer (LT-ZnSe) in improving crystallinity of ZnSe-based films grown on GaAs substrate. Especially, the density of stacking fault defects, which is normally observed i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e209ac5412db6950dc7aaf4d9bac174
https://doi.org/10.1016/s0022-0248(02)01355-6
https://doi.org/10.1016/s0022-0248(02)01355-6