Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Meoung-Whan Cho"'
Autor:
Meoung Whan Cho, Hyun-Jung Lee, Seog Woo Lee, Seoung-Ki Lee, Sukang Bae, Hyesu Ryu, Sang Hyun Lee, Jun-Seok Ha, Tae-Wook Kim, Hokyun Rho
Publikováno v:
Carbon. 183:93-99
Despite the remarkable thermal properties of graphene, the heat transport along the z-axis is intrinsically limited by the van der Waals interactions, leading to thermal anisotropy in multilayered graphene (or graphite) and its composites. Herein, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::122b4a2bef360112542597f9ed5c2cc4
https://doi.org/10.1016/j.carbon.2021.07.008
https://doi.org/10.1016/j.carbon.2021.07.008
Autor:
Hyun-Yong Lee, Sung-June Cho, Gi-Yeon Nam, Wook-Hyun Lee, Takeshi Baba, Hisao Makino, Meoung-Whan Cho, Takafumi Yao
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p103111-1-103111-4, 4p, 1 Diagram, 5 Graphs
Autor:
Jun-Seok Ha, Hae Woo Lee, Sung Keun Lee, Sang Hwa Lee, Takafumi Yao, Jinsub Park, Meoung Whan Cho, Seog Woo Lee, Hyo-Jong Lee, Soon-Ku Hong
Publikováno v:
Electronic Materials Letters. 8:135-139
We investigated the nucleation and growth behavior of GaN on various powders by hydride vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each powder can be summarized as AlN > LaN, TiN, NbN > ZrN > ZrB2 > VN, BeO, indica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c3ea12ec96ff125c6bc5419989fad23
https://doi.org/10.1007/s13391-012-1076-4
https://doi.org/10.1007/s13391-012-1076-4
Autor:
Hyo-Jong Lee, Meoung Whan Cho, Kenji Shimoyama, Jun-Seok Ha, Satoru Nagao, Kenji Fujito, Seog Woo Lee, Soon-Ku Hong, Takafumi Yao, Hyunjae Lee, Hideo Namita, Hiroki Goto, Sang Hyun Lee
Publikováno v:
Journal of Crystal Growth. 311:470-473
Recently, an innovative method of fabricating vertical light-emitting diode (LED) was introduced by the chemically lift-off (CLO) process. Such fabrication of the vertical LED could be realized by inserting the CrN interlayer between sapphire substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a586c0519b7ba33d4a5c9fe5a88bc0a6
https://doi.org/10.1016/j.jcrysgro.2008.09.054
https://doi.org/10.1016/j.jcrysgro.2008.09.054
Publikováno v:
physica status solidi c. 4:116-119
We investigate the effects of inserting defective stress absorbing layer (SAL) in between sapphire substrate and thick GaN layer. A two-step growth technique, in which GaN layers grow at different growth rates in each step, is adopted for growing hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f9a02f36bbdea2efa42b8eeb4154b03
https://doi.org/10.1002/pssc.200673573
https://doi.org/10.1002/pssc.200673573
Autor:
S. K. Hong, Seogwoo Lee, D. C. Oh, Takafumi Yao, J. W. Choi, Meoung Whan Cho, J. E. Shin, Hiroki Goto, Jeong Soo Lee, Jun-Ho Jang, Takashi Hanada, Hyo-Jong Lee, S. R. Cho, Jun-Seok Ha, Jeong-Hyeon Choi, H. Y. Lee
Publikováno v:
physica status solidi c. 4:37-40
In order to understand the origin of leakage current, light emitting devices were grown on two different templates with apparently different dislocation density: one on thin GaN template (∼2 μm) with higher dislocation density (low × 109 cm–2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::306e2a763bd5230257b6b1fc00616c3c
https://doi.org/10.1002/pssc.200673552
https://doi.org/10.1002/pssc.200673552
Autor:
Sang Hyun Lee, Meoung Whan Cho, Tomoyuki Yasukawa, Dong-Cheol Oh, Hyunchui Ko, Seog Woo Lee, Takafumi Yao, Hyun Jung Lee, Soon-Ku Hong, Hiroki Goto, Tomokazu Matsue, Ryan Buckmaster
Publikováno v:
The Journal of Physical Chemistry B. 110:3856-3859
We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7620811bb14a116c795af36033e6b9d
https://doi.org/10.1021/jp056915n
https://doi.org/10.1021/jp056915n
Publikováno v:
Current Applied Physics. 4:621-624
We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9e854a0ba795596446f18b5c88ce5b
https://doi.org/10.1016/j.cap.2004.01.034
https://doi.org/10.1016/j.cap.2004.01.034
Autor:
Z. Vashaei, Kazuhiro Miyamoto, Hang-Ju Ko, I. Yonenaga, Hiroyuki Kato, Takafumi Yao, Michihiro Sano, Meoung Whan Cho, Agus Setiawan
Publikováno v:
Journal of Applied Physics. 96:3763-3768
We have investigated the characteristic of the dislocations in the ZnO layers grown on c sapphire by the plasma-assisted molecular beam epitaxy under the different Zn∕O flux ratios. The ZnO layers were characterized by the transmission electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::885267fda7c4c62a7928ef99f8e00c6a
https://doi.org/10.1063/1.1785852
https://doi.org/10.1063/1.1785852
Autor:
Meoung Whan Cho, Z. Vashaei, In Ho Im, Hyun Jung Lee, Sang Hyun Lee, Takashi Hanada, Takafumi Yao
Publikováno v:
Crystal Growth & Design. 6:2640-2642
Single-crystalline ZnO nanowires are fabricated by thermal chemical vapor transport and condensation on AlN epilayers without employing any metal catalyst. Before the growth of ZnO nanowires, the surface of AlN epilayers was treated by HF solution an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50db5d68dcaf1c082cfc2f080a084775
https://doi.org/10.1021/cg060435j
https://doi.org/10.1021/cg060435j