Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Menshchikova, T."'
Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We found signif
Externí odkaz:
http://arxiv.org/abs/2208.07098
Autor:
Fedorov, V. A.1 (AUTHOR) fedorov@igic.ras.ru, Menshchikova, T. K.1 (AUTHOR), Nikonov, K. S.1 (AUTHOR), Brekhovskikh, M. N.1 (AUTHOR), Myslitskii, O. E.1 (AUTHOR)
Publikováno v:
Theoretical Foundations of Chemical Engineering. Oct2023, Vol. 57 Issue 5, p1079-1082. 4p.
Autor:
Fedorov, V. A.1 (AUTHOR) fedorov@igic.ras.ru, Menshchikova, T. K.1 (AUTHOR), Nikonov, K. S.1 (AUTHOR), Brekhovskikh, M. N.1 (AUTHOR), Myslitskii, O. E.1 (AUTHOR)
Publikováno v:
Theoretical Foundations of Chemical Engineering. Aug2023, Vol. 57 Issue 4, p644-649. 6p.
Autor:
Menshchikova, T. K.1 (AUTHOR), Baranchikov, A. E.1 (AUTHOR), Nikonov, K. S.1 (AUTHOR), Vaimugin, L. A.1 (AUTHOR), Myslitskii, O. E.1 (AUTHOR), Brekhovskikh, M. N.1 (AUTHOR) mbrekh@igic.ras.ru
Publikováno v:
Inorganic Materials. Aug2023, Vol. 59 Issue 8, p819-824. 6p.
Autor:
Rusinov, I. P., Menshchikova, T. V., Sklyadneva, I. Yu., Heid, R., Bohnen, K. -P., Chulkov, E. V.
We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized through the
Externí odkaz:
http://arxiv.org/abs/1607.05680
Autor:
Eremeev, S. V., Menshchikova, T. V., Silkin, I. V., Vergniory, M. G., Echenique, P. M., Chulkov, E. V.
Publikováno v:
Phys. Rev. B 91, 245145 (2015)
A new type of topological spin-helical surface states was discovered in layered van der Waals bonded (SnTe)$_{n=2,3}$(Bi$_2$Te$_3$)$_{m=1}$ compounds which comprise two covalently bonded band inverted subsystems, SnTe and Bi$_2$Te$_3$, within a build
Externí odkaz:
http://arxiv.org/abs/1505.07616
Autor:
Men'shov, V. N., Tugushev, V. V., Menshchikova, T. V., Eremeev, S. V., Echenique, P. M., Chulkov, E. V.
We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological phase eng
Externí odkaz:
http://arxiv.org/abs/1406.7191
Autor:
Batov, A. V.1,2 (AUTHOR) batov@ipu.ru, Menshchikova, T. I.1 (AUTHOR), Gudkova, T. V.1 (AUTHOR) gudkova@ifz.ru
Publikováno v:
Solar System Research. Feb2023, Vol. 57 Issue 1, p25-34. 10p.
Publikováno v:
JETP Letters, February 2013, Volume 96, Issue 12, pp 780-784
The unoccupied states in topological insulators Bi_2Se_3, PbSb_2Te_4, and Pb_2Bi_2Te_2S_3 are studied by the density functional theory methods. It is shown that a surface state with linear dispersion emerges in the inverted conduction band energy gap
Externí odkaz:
http://arxiv.org/abs/1303.2472
Autor:
Niesner, D., Fauster, Th., Eremeev, S. V., Menshchikova, T. V., Koroteev, Y. M., Protogenov, A. P., Chulkov, E. V., Tereshchenko, O. E., Kokh, K. A., Alekperov, O., Nadjafov, A., Mamedov, N.
Publikováno v:
Phys. Rev. B 86, 205403 (2012)
The unoccupied part of the band structure of topological insulators Bi$_2$Te$_{x}$Se$_{3-x}$ ($x=0,2,3$) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface states are foun
Externí odkaz:
http://arxiv.org/abs/1210.3281