Zobrazeno 1 - 10
of 110
pro vyhledávání: '"Mengyuan Hua"'
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-10 (2023)
Abstract Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting Ga2O3 polymorphs and low-symmetry disordered structures is
Externí odkaz:
https://doaj.org/article/7a6391922b4a4c8e915ef863a6264cb4
Autor:
Pu Ai, Fengjun Yan, Wen Dong, Shi Liu, Junlei Zhao, Kan-Hao Xue, Syed Ul Hasnain Bakhtiar, Yilong Liu, Qi Ma, Ling Miao, Mengyuan Hua, Guangzu Zhang, Shenglin Jiang, Wei Luo, Qiuyun Fu
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-9 (2023)
Abstract The scale-free ferroelectric polarization of fluorite MO2 (M = Hf, Zr) due to flat polar phonon bands are promising for nonvolatile memories. Defects are also widely introduced to improve the emergent ferroelectricity. However, their roles a
Externí odkaz:
https://doaj.org/article/92a9e3e3685b4b8bbf516fe2f2eac981
Autor:
Meng Zhang, Yamin Zhang, Baikui Li, Shiwei Feng, Mengyuan Hua, Xi Tang, Jin Wei, Kevin J. Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 198-203 (2023)
In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state.
Externí odkaz:
https://doaj.org/article/1e76b83108aa442a80222ed664a1898d
Autor:
Xiangbin Cai, Zefei Wu, Xu Han, Yong Chen, Shuigang Xu, Jiangxiazi Lin, Tianyi Han, Pingge He, Xuemeng Feng, Liheng An, Run Shi, Jingwei Wang, Zhehan Ying, Yuan Cai, Mengyuan Hua, Junwei Liu, Ding Pan, Chun Cheng, Ning Wang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Barrier-free metal-semiconductor interfaces are crucial to improve the performance of 2D electronic devices. Here, the authors report a strategy to induce local bonding distortion in 2D transition metal dichalcogenides via soft oxygen plasma treatmen
Externí odkaz:
https://doaj.org/article/d2d598fbb0c949eb9bcf11ce4a44a979
Publikováno v:
Energy Reports, Vol 6, Iss , Pp 1099-1105 (2020)
Machine learning approaches have diverse applications in forecasting electrical energy consumption using smart meter data. Various classification techniques and clustering methods analyze smart meter data for accurately forecasting the electrical app
Externí odkaz:
https://doaj.org/article/6f5e2549ea5145cb9ecc7ca3a13df581
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 358-364 (2020)
In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collaps
Externí odkaz:
https://doaj.org/article/26ddfa601c944306b68f90bf0a1f0652
Publikováno v:
IEEE Sensors Journal. 23:10285-10292
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a65c5431e0fdfd147482b28ff045c3b6
https://doi.org/10.1109/jsen.2023.3262781
https://doi.org/10.1109/jsen.2023.3262781
Autor:
Yanlin Wu, Jin Wei, Maojun Wang, Muqin Nuo, Junjie Yang, Wei Lin, Zheyang Zheng, Li Zhang, Mengyuan Hua, Xuelin Yang, Yilong Hao, Kevin J. Chen, Bo Shen
Publikováno v:
IEEE Electron Device Letters. 44:25-28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b4a439af27fe40615de1e8497baa2b
https://doi.org/10.1109/led.2022.3222170
https://doi.org/10.1109/led.2022.3222170
Autor:
Mengyuan Hua
Publikováno v:
Science Insights Education Frontiers. 13:1899-1909
The 2021 release of Reimagining Our Futures Together: A New Social Contract for Education by the United Nations Educational, Scientific, and Cultural Organization was a reaction to a number of serious problems discovered in worldwide educational refo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3c39dab3f11fae151b9e19a10e06f14
https://doi.org/10.15354/sief.22.or076
https://doi.org/10.15354/sief.22.or076
Autor:
Li Zhang, Zheyang Zheng, Wenjie Song, Tao Chen, Sirui Feng, Junting Chen, Mengyuan Hua, Kevin J. Chen
Publikováno v:
IEEE Electron Device Letters. 43:1822-1825
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86c212d795c776343cced0cf0954a1a4
https://doi.org/10.1109/led.2022.3206470
https://doi.org/10.1109/led.2022.3206470