Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mengyi Qian"'
Autor:
Cheng Zheng, Mengyi Qian, Tongmin Huang, Xingchen Liu, Xiangman Zeng, Xiaotong Chen, Yan Shen, Ping Chen, Feng Wu, Lihu Gu
Publikováno v:
Clinical Medicine Insights: Oncology, Vol 18 (2024)
Background: Patients with gastric cancer (GC) who underwent radical surgery require long-term follow-up (usually 5 years). The purpose of this study was to explore individualized follow-up strategies for patients with GC. Methods: This is a retrospec
Externí odkaz:
https://doaj.org/article/957628b81c75466c903b9a83e240072a
Publikováno v:
BMC Public Health, Vol 24, Iss 1, Pp 1-10 (2024)
Abstract Introduction Post-stroke depression (PSD) is a common neuropsychiatric complication that affects approximately one-third of stroke patients. The treatment and prognosis of this disease are poor. Socioeconomic status (SES) is closely related
Externí odkaz:
https://doaj.org/article/6cfdf724bd2d4822975c68567dc8125e
Autor:
Yiwei Duan, Haixia Gao, Yuxin Sun, Shuliang Wu, Mengyi Qian, Jingshu Guo, Mei Yang, Xiaohua Ma, Yintang Yang
Publikováno v:
IEEE Transactions on Electron Devices. 69:6369-6375
Publikováno v:
Applied Physics Letters. 122:113504
In this Letter, a Pt/SiNx/TiN/Ta resistive random access memory (RRAM) is proposed, which has low switching voltage, uniform resistance distribution, excellent cycle-to-cycle stability, and excellent nonvolatile performance. As an insertion layer, Ti
Autor:
Shuliang Wu, Haixia Gao, Yuxin Sun, Jingshu Guo, Yiwei Duan, Mengyi Qian, Xiaohua Ma, Yintang Yang
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 17:2200240
Autor:
Yiwei Duan, Haixia Gao, Mengyi Qian, Yuxin Sun, Shuliang Wu, Jingshu Guo, Mei Yang, Xiaohua Ma, Yintang Yang
Publikováno v:
Applied Physics Letters. 121:073502
This Letter investigates the effect of non-inert electrode thickness on the performance of complementary resistive switching (CRS). Five devices with different Ta electrode thicknesses (0, 2, 5, 10, and 20-nm) are fabricated. For devices with 2, 5, a
Autor:
Yuxin Sun, Haixia Gao, Shuliang Wu, Yiwei Duan, Mengyi Qian, Jingshu Guo, Mei Yang, Xiaohua Ma, Yintang Yang
Publikováno v:
Applied Physics Letters. 121:032104
The introduction of PbS QD (quantum dot) films has been proved, dramatically, to optimize the resistive switching (RS) performance in oxide resistive random access memory. In order to optimize parameters to a greater extent, the necessity of in-depth
Autor:
Yiwei Duan, Haixia Gao, Mengyi Qian, Yuxin Sun, Shuliang Wu, Jingshu Guo, Mei Yang, Xiaohua Ma, Yintang Yang
Publikováno v:
Applied Physics Letters. 120:263504
This paper reported the Pt/AlOxNy/Ta structure with oxygen scavenging metal Ta as a top electrode in order to achieve excellent data storage and the artificial synaptic function. As a series resistance layer and a thermal enhanced layer, the TaOx int
Autor:
Yiwei Duan, Haixia Gao, Mengyi Qian, Yuxin Sun, Shuliang Wu, Jingshu Guo, Mei Yang, Xiaohua Ma, Yintang Yang
Publikováno v:
Applied Physics Letters. 120:203506
At present, the physical mechanism of complementary resistive switching (CRS) devices remains controversial. In this Letter, stable CRS can be achieved in Pt/AlOxNy/Ta resistive random access memory (RRAM). A dynamic evolution from bipolar resistive