Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mengren Liu"'
Autor:
Jiayou Liu, Hongdan Yu, Shengxue Yu, Mengren Liu, Xinyuan Chen, Yufei Wang, Jing Li, Caixing Shi, Wenqiang Liu, Zhongfu Zuo, Xuezheng Liu
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-20 (2024)
Abstract Retinal ganglion cells (RGCs) are among the first neurons to undergo apoptosis in diabetic retinopathy (DR), with their relationship to endoplasmic reticulum stress (ERS)-induced apoptosis still unclear. While glucocorticoid-induced transcri
Externí odkaz:
https://doaj.org/article/b4b9e665956e4488b027761d9d73f111
Publikováno v:
Advanced Science, Vol 11, Iss 5, Pp n/a-n/a (2024)
Abstract Diffusion in alloys is an important class of atomic processes. However, atomistic simulations of diffusion in chemically complex solids are confronted with the timescale problem: the accessible simulation time is usually far shorter than tha
Externí odkaz:
https://doaj.org/article/02e1f30309cf455bb4ea9abd1882640e
Autor:
Joanna Borowiec, Mengren Liu, Weizheng Liang, Theo Kreouzis, Adrian J. Bevan, Yi He, Yao Ma, William P. Gillin
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2103 (2020)
In this study, both memcapacitive and memristive characteristics in the composite material based on the rhenium disulfide (ReS2) rich in rhenium (VI) oxide (ReO3) surface overlayer (ReO3@ReS2) and in the indium tin oxide (ITO)/ReO3@ReS2/aluminum (Al)
Externí odkaz:
https://doaj.org/article/e3e49279a7bb4cbbad8518bd1feecd26
Autor:
Theo Kreouzis, William P. Gillin, Weizheng Liang, Yi He, Joanna Borowiec, Yao Ma, Mengren Liu, Adrian John Bevan
Publikováno v:
Nanomaterials
Volume 10
Issue 11
Nanomaterials, Vol 10, Iss 2103, p 2103 (2020)
Volume 10
Issue 11
Nanomaterials, Vol 10, Iss 2103, p 2103 (2020)
In this study, both memcapacitive and memristive characteristics in the composite material based on the rhenium disulfide (ReS2) rich in rhenium (VI) oxide (ReO3) surface overlayer (ReO3@ReS2) and in the indium tin oxide (ITO)/ReO3@ReS2/aluminum (Al)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a34889ae266f773af12f0fed7012ac46
Autor:
Marek Konop, William P. Gillin, Mohammad M. Rahman, Lin J. Jun Sun, Ayoub Taallah, Mengren Liu, Joanna Borowiec, Filippo S. Boi
Publikováno v:
Applied Physics Letters. 115:073505
In this study, the determination of the charge carrier conduction in a memristor based on barium doped zinc oxide (Ba0.95ZnO1-x) nanoparticles (NPs) in an indium tin oxide (ITO)/Ba0.95ZnO1-xNP/aluminium (Al) configuration, as well as an explanation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::869d8d0793eed696b193f9f25ab89b55
https://doi.org/10.1063/1.5110888
https://doi.org/10.1063/1.5110888