Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Mengrao Tang"'
Publikováno v:
Symmetry, Vol 14, Iss 11, p 2232 (2022)
MXene, 2D transition metal carbides, nitrides, and carbonitrides with a unique 2D structure, inspired a series of function applications related to energy storage and conversion, biometrics and sensing, lighting, purification, and separation. Its surf
Externí odkaz:
https://doaj.org/article/fc7d453cef2c422fa482ceb4b58f77d3
Autor:
Mengrao Tang, Honghao Cai
Publikováno v:
Chemical Physics. 530:110626
The mechanism for modulating the effective Schottky barrier height of NiGe/Ge contacts by incorporating impurities is still under debate. There is a view that impurities segregated at the NiGe/Ge interface act as donors or passivators that alleviate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f3882b963476a7aba11b22d294954d9
https://doi.org/10.1016/j.chemphys.2019.110626
https://doi.org/10.1016/j.chemphys.2019.110626
Publikováno v:
IEEE Transactions on Electron Devices. 59:2438-2443
Formation and electrical properties of nickel silicidized n-type Si and $ \hbox{Si}_{1-x}\hbox{Ge}_{x}$ epilayers on a Si substrate are comparatively studied. The improvement of thermal stability of germanosilicide can be attributed to the thicker Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3297678c642d0b43520f3909901f88b5
https://doi.org/10.1109/ted.2012.2202287
https://doi.org/10.1109/ted.2012.2202287
Publikováno v:
IEEE Electron Device Letters. 31:863-865
The thermal stability of a nickel germanide film formed on a tensile-strained Ge epilayer on a silicon substrate with a low-temperature Si0.77Ge0.23 (50-nm)/Ge (50-nm) buffer is investigated. A record temperature of 700°C for the stability of sheet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9f724058394c19ced3f8b6dbc96fe5
https://doi.org/10.1109/led.2010.2049979
https://doi.org/10.1109/led.2010.2049979
Autor:
Cheng Li, Guangming Yan, Huang Shihao, Weifang Lu, Chen Wang, Guangyang Lin, Songyan Chen, Mengrao Tang
Publikováno v:
Applied Physics Letters. 103:253506
In this Letter, NiGe/SiO2/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO2 films to form NiGe. The equivalent Schottky barrier height reduced from 0.58 eV for NiGe/n-Ge to ohmic contact. The anom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6f8c2652504478976d3d5ac8b65b5f
https://doi.org/10.1063/1.4852177
https://doi.org/10.1063/1.4852177
Autor:
Cheng Li, Hongkai Lai, Maotian Zhang, Wei Huang, Songyan Chen, Chen Wang, Guangyang Lin, Mengrao Tang
Publikováno v:
Journal of Applied Physics. 114:023515
Ge segregation and strain evolution in the SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73 Ge 0.27 epilayer are studied in temperature range of 300-900 °C. The continuous NiSiGe film on SiGe epilayer is formed at 500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d33317b432ba7981a0b4ff40681545
https://doi.org/10.1063/1.4813778
https://doi.org/10.1063/1.4813778
Publikováno v:
Applied Physics Express. 6:075505
National Natural Science Foundation of China [61176092, 61036003, 60837001]; National Basic Research Program of China [2012CB933503, 2013CB632103]; Ph. D. Programs Foundation of Ministry of Education of China [20110121110025]; Fundamental Research Fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3003953a2d35119cba53ec2ccacb4006
https://doi.org/10.7567/apex.6.075505
https://doi.org/10.7567/apex.6.075505
Autor:
Mengrao Tang, Wei Huang, Chang-Bao Lu, Songyan Chen, Zheng Wu, Cheng Li, Rui-Fan Tang, Hongkai Lai, Xu Yang, Guanzhou Liu
Publikováno v:
Chinese Physics B. 21:117701
National Natural Science Foundation of China [61176092, 61036003, 60837001]; National Basic Research Program of China [2012CB933503]; Ph.D. Program Foundation of Ministry of Education of China [20110121110025]; Fundamental Research Funds for the Cent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231a00f65d263ddfa3c8230231de0da3
https://doi.org/10.1088/1674-1056/21/11/117701
https://doi.org/10.1088/1674-1056/21/11/117701
Publikováno v:
IEEE Electron Device Letters; Aug2010, Vol. 31 Issue 8, p863-865, 3p