Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Menglin, Qiu"'
Autor:
Yumin Wang, Gaoyuan Chen, Zibin Zhu, Haoming Qin, Liangwei Yang, Duo Zhang, Yingguo Yang, Menglin Qiu, Ke Liu, Zhifang Chai, Wanjian Yin, Yaxing Wang, Shuao Wang
Publikováno v:
ACS Central Science, Vol 9, Iss 9, Pp 1827-1834 (2023)
Externí odkaz:
https://doaj.org/article/40dcf7261fb64936b25dd74e7f35e818
Autor:
Wenli Jiang, Wei Cheng, Menglin Qiu, Shuai Wu, Xiao Ouyang, Lin Chen, Pan Pang, Minju Ying, Bin Liao
Publikováno v:
Materials, Vol 16, Iss 7, p 2935 (2023)
In this paper, DI defects are studied via experiments and calculations. The 2 MeV H+ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results sho
Externí odkaz:
https://doaj.org/article/ddb9160d608745a6a5aae9e3fc0c69c8
Autor:
Zhiqiang Zhang, Lan Zhang, Heng Yuan, Menglin Qiu, Xu Zhang, Bin Liao, Fengshou Zhang, Xiaoping Ouyang
Publikováno v:
Materials, Vol 15, Iss 6, p 2236 (2022)
High hardness improves the material’s load-bearing capacity, resulting in the enhancement of tribological properties. However, the high hardness is difficult to achieve for TiAlN coating due to the transformation of the close-packed structure from
Externí odkaz:
https://doaj.org/article/0d8bfacda7ef4b8cb3d90242434043fe
Autor:
Yifan Zhang, Qian Li, Heng Yuan, Weiqing Yan, Shunian Chen, Menglin Qiu, Bin Liao, Lin Chen, Xiao Ouyang, Xu Zhang, Minju Ying
Publikováno v:
ACS Applied Materials & Interfaces. 14:21461-21473
Publikováno v:
Electronics; Volume 12; Issue 6; Pages: 1473
AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and low-fi
Publikováno v:
ACS Applied Materials & Interfaces. 13:58179-58192
Polymers used for the exteriors of spacecraft are always exposed to risks such as atomic oxygen (AO) or electrostatic discharge (ESD) degradation. In this work, an AlxTiyO/NiCr coating with excellent mechanical stability, AO durability, and electrost
Autor:
Guo-Qiang Zhao, Jin-Fu Zhang, Guangfu Wang, Zhenglong Wu, Shasha Lv, Menglin Qiu, Ting-Shun Wang
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 504:6-13
Ion beam-induced luminescence (IBIL) spectroscopy based on the stark level characteristics of trivalent neodymium (Nd3+): 4F3/2 → 4I9/2 emissions is a powerful tool for characterizing material molecules and crystal structures and quantifying radiat
Publikováno v:
Radiation Measurements. 160:106878
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 471:7-12
The effects of annealing at 473 K and 800 K and of 2 MeV H+ irradiation on the behaviour of defects in ZnO crystals were studied via ionoluminescence (IL) and photoluminescence (PL). The PL spectra of samples annealed in vacuum at 473 K and 800 K sho
Autor:
Jianping Cheng, Yazi Wang, Shasha Lv, Menglin Qiu, Mingyang Li, Chienhua Chen, Fanghan Dong, Zhengcao Li
Publikováno v:
Surface and Interface Analysis. 52:348-354