Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Menglai Lei"'
Autor:
Menglai Lei, Huanqing Chen, Muhammad Saddique Akbar Khan, Shukun Li, Rui Lang, Peijun Wen, Guo Yu, Shengxiang Jiang, Hua Zong, Xiaodong Hu
Publikováno v:
Applied Surface Science Advances, Vol 17, Iss , Pp 100449- (2023)
GaN-based III-Nitride compound semiconductors are fundamental materials for high-performance optoelectronic and electronic devices. Low-defect-density substrate has been a major bottleneck in achieving high internal quantum efficiency and high breakd
Externí odkaz:
https://doaj.org/article/37d6ccf6c2b64a0c8e7b5b7cdac1ebeb
Autor:
Peijun Wen, Fuyun Tan, Meng Wu, Qijun Cai, Ruiping Xu, Xiaowen Zhang, Yongzhi Wang, Shukun Li, Menglai Lei, Huanqing Chen, Muhammad Saddique Akbar Khan, Qihong Zou, Xiaodong Hu
Publikováno v:
Heliyon, Vol 9, Iss 4, Pp e14627- (2023)
Coronavirus disease 2019 (COVID-19) remains a public health emergency of international concern, and some countries still implement strict regional lockdowns. Further, the upcoming 2023 Asian Games and World University Games will implement a closed-lo
Externí odkaz:
https://doaj.org/article/41443cbdfb594170882287d8c9c08e7d
Publikováno v:
PLoS ONE, Vol 17, Iss 3, p e0266266 (2022)
The circadian rhythm affects the biological evolution and operating mechanisms of organisms. The impact of light on the circadian rhythm is a significant concern for both biology and human well-being. However, the relation between different wavelengt
Externí odkaz:
https://doaj.org/article/df43700dce644853bdfdb02b20ebb186
Autor:
Muhammad Saddique Akbar Khan, Menglai Lei, Huanqing Chen, Guo Yu, Rui Lang, Shukun Li, Xiaodong Hu
Publikováno v:
Materials Research Express, Vol 9, Iss 4, p 045901 (2022)
Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, high-quality growth of this material remains a challenge. In this work, the crystal q
Externí odkaz:
https://doaj.org/article/f06116c897ab495d9217030e5aa33130
Publikováno v:
Physica Scripta.
Room-temperature exciton-polariton is observed in GaN/InGaN core-shell microrods grown by metal-organic vapor phase epitaxy. We demonstrate a large Rabi splitting in the core-shell microrod structure over 265 meV. Room-temperature lasing in core-shel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11178cfb593932fbc52f71323d1590c1
https://doi.org/10.1088/1402-4896/acd4f6
https://doi.org/10.1088/1402-4896/acd4f6
Autor:
Linghai Meng, Shukun Li, Huanqing Chen, Menglai Lei, Guo Yu, Peijun Wen, Jianbo Fu, Shengxiang Jiang, Hua Zong, Dong Li, Xiaodong Hu
Publikováno v:
Journal of Luminescence. 261:119913
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df2600beada143fdd79734594467d53
https://doi.org/10.1016/j.jlumin.2023.119913
https://doi.org/10.1016/j.jlumin.2023.119913
Autor:
Shukun Li, Menglai Lei, Rui Lang, Guo Yu, Huanqing Chen, Peijun Wen, Muhammad Saddique Akbar Khan, Linghai Meng, Hua Zong, Shengxiang Jiang, Xiaodong Hu
Publikováno v:
Semiconductor Science and Technology. 38:075007
Electron leakage currents seriously limit the power conversion efficiencies (PCEs) of gallium nitride (GaN)-based laser diodes (LDs). To minimize the leakage currents, electron blocking layers are generally applied in the p-type region. However, few
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2fb81be4a9a8cf57ea8d97e4f81d66a
https://doi.org/10.1088/1361-6641/acd573
https://doi.org/10.1088/1361-6641/acd573
Autor:
Xiaodong Hu, Guo Yu, Muhammad Saddique Akbar Khan, Huanqing Chen, Menglai Lei, Hua Zong, Shukun Li, Rui Lang
Publikováno v:
CrystEngComm. 23:5609-5614
Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc9feb681c056744bb15ce4084ee2853
https://doi.org/10.1039/d1ce00836f
https://doi.org/10.1039/d1ce00836f
Autor:
null Muhammad Saddique Akbar Khan, null Menglai Lei, null Huanqing Chen, null Guo Yu, null Rui Lang, null Shukun Li, null Xiaodong Hu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::193b98c62de203614fd2735dfa679b6e
https://doi.org/10.1088/2053-1591/ac65e2/v3/response1
https://doi.org/10.1088/2053-1591/ac65e2/v3/response1
Autor:
Shukun Li, Guo Yu, Rui Lang, Menglai Lei, Huanqing Chen, Muhammad Saddique Akbar Khan, Linghai Meng, Hua Zong, Shengxiang Jiang, Peijun Wen, Wei Yang, Xiaodong Hu
Publikováno v:
Optics express. 30(3)
The electrical-to-optical power conversion efficiencies of the light-emitting devices based on gallium nitride (GaN) are seriously limited by electron leakage currents due to the relatively low mobility and activation ratio of holes. However, there h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfe4ce6d03563f5d6f9c120fbfa3e84a
https://pubmed.ncbi.nlm.nih.gov/35209645
https://pubmed.ncbi.nlm.nih.gov/35209645