Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Meng-Hsi Chuang"'
Autor:
Meng-Hsi Chuang, Chun-An Chen, Po-Yen Liu, Xin-Quan Zhang, Nai-Yu Yeh, Hao-Jen Shih, Yi-Hsien Lee
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-9 (2022)
Abstract Moiré lattice in artificially stacked monolayers of two-dimensional (2D) materials effectively modulates the electronic structures of materials, which is widely highlighted. Formation of the electronic Moiré superlattice promises the prosp
Externí odkaz:
https://doaj.org/article/60c7cabe9552488fbc1f35b7ec26d36b
Autor:
Po-Han Chen, Chun-An Chen, Yu-Ting Lin, Ping-Yi Hsieh, Meng-Hsi Chuang, Xiaoze Liu, Tung-Ying Hsieh, Chang-Hong Shen, Jia-Min Shieh, Meng-Chyi Wu, Yung-Fu Chen, Chih-Chao Yang, Yi-Hsien Lee
Publikováno v:
ACS Applied Materials & Interfaces. 15:10812-10819
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30b184cd8828ea92646e28f89a8cc2af
https://doi.org/10.1021/acsami.2c19705
https://doi.org/10.1021/acsami.2c19705
Autor:
Meng‐Hsi Chuang, Kuan‐Chang Chiu, Yu‐Ting Lin, George Tulevski, Po‐Han Chen, Atiye Pezeshki, Chung‐Jen Chen, Po‐Yen Chen, Lih‐Juann Chen, Shu‐Jen Han, Yi‐Hsien Lee
Publikováno v:
Advanced Functional Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4744874aa26b6ac73e763fe85c1dbf
https://doi.org/10.1002/adfm.202212722
https://doi.org/10.1002/adfm.202212722
Autor:
Meng-Hsi Chuang, Chun-An Chen, Po-Yen Liu, Xin-Quan Zhang, Nai-Yu Yeh, Hao-Jen Shih, Yi-Hsien Lee
Publikováno v:
Nanoscale research letters. 17(1)
Moiré lattice in artificially stacked monolayers of two-dimensional (2D) materials effectively modulates the electronic structures of materials, which is widely highlighted. Formation of the electronic Moiré superlattice promises the prospect of un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc3a97950af593a493358b99dff77c23
https://pubmed.ncbi.nlm.nih.gov/35286495
https://pubmed.ncbi.nlm.nih.gov/35286495
Autor:
Meng-Hsi Chuang, Anantha P. Chandrakasan, Yuxuan Lin, Jing Kong, Dina El-Damak, Ahmad Zubair, Dimitri A. Antoniadis, Lili Yu, Yi-Hsien Lee, Ujwal Radhakrishna, Tomas Palacios, Yuhao Zhang, Xi Ling
Publikováno v:
Nano Letters. 16:6349-6356
Two-dimensional electronics based on single-layer (SL) MoS2 offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties, and stable crystalline structure. In this work, we utilize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0121f454a124b5a7e21fa53f73c198c
https://doi.org/10.1021/acs.nanolett.6b02739
https://doi.org/10.1021/acs.nanolett.6b02739
Autor:
Meng-Hsi Chuang, Chun-An Chen, Jenn-Ming Wu, Kuan-Hua Huang, Xin-Quan Zhang, Kuan-Chang Chiu, Ying-Yu Lai, Yi-Hsien Lee, Erh-chen Lin
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 30(7)
Recently, monolayers of van der Waals materials, including transition metal dichalcogenides (TMDs), are considered ideal building blocks for constructing 2D artificial lattices and heterostructures. Heterostructures with multijunctions of more than t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c90240bfd380ea53dba3e33c4fbbae1c
https://pubmed.ncbi.nlm.nih.gov/29271505
https://pubmed.ncbi.nlm.nih.gov/29271505
Autor:
Lili, Yu, Dina, El-Damak, Ujwal, Radhakrishna, Xi, Ling, Ahmad, Zubair, Yuxuan, Lin, Yuhao, Zhang, Meng-Hsi, Chuang, Yi-Hsien, Lee, Dimitri, Antoniadis, Jing, Kong, Anantha, Chandrakasan, Tomas, Palacios
Publikováno v:
Nano letters. 16(10)
Two-dimensional electronics based on single-layer (SL) MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c1ba0cf179bde38cfd6af150daa8f5c7
https://pubmed.ncbi.nlm.nih.gov/27633942
https://pubmed.ncbi.nlm.nih.gov/27633942
Autor:
Meng-Chyi Wu, Chang-Ning Liao, Meng-Hsi Chuang, Jia-Min Shieh, Yi-Hsien Lee, Chih-Chao Yang, Yu-Hsiu Chen, Wen-Hsien Huang, Kuan-Chang Chiu, Cheng-Tse Chou, Tung-Ying Hsieh, Chang-Hong Shen, Wen-Kuan Yeh
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
A monolithic 3D image sensor is demonstrated by sequentially fabricating large-area (>2cm×2cm) monolayer ( 20A/W). The bottom 3D stackable poly-Si nanowire FET, fabricated by low thermal budget process (T sub 200uA/um). The low driving voltage 6T SR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684eaa98e551704ca2143a6f90df7913
https://doi.org/10.1109/vlsit.2016.7573448
https://doi.org/10.1109/vlsit.2016.7573448
Autor:
Kuan-Hua Huang, Ying-Yu Lai, Chun-An Chen, Xin-Quan Zhang, Meng-Hsi Chuang, Erh-chen Lin, Kuan-Chang Chiu, Yi-Hsien Lee, Jenn-Ming Wu
Publikováno v:
Advanced Materials. 30:1870043
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8186e895d1f9014bf3d0c2eb79b8d6f
https://doi.org/10.1002/adma.201870043
https://doi.org/10.1002/adma.201870043
Autor:
Yi-Hsien Lee, Dah Chin Ling, Yung-Fu Chen, Atiye Pezeshki, Po Han Chen, Meng Hsi Chuang, Yen Po Liu, Ji Wun Wang, Jeng-Chung Chen
Publikováno v:
Advanced Electronic Materials. 4:1700340
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fa3f37bc8c5e11fec542f4a3a615892
https://doi.org/10.1002/aelm.201700340
https://doi.org/10.1002/aelm.201700340