Electrically driven long-range solid-state amorphization in ferroic In 2 Se 3 .

Autor: Modi G; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA., Parate SK; Centre for Nanoscience and Engineering, Indian Institute of Science, Bengaluru, India., Kwon C; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Meng AC; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA., Khandelwal U; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA., Tullibilli A; Centre for Nanoscience and Engineering, Indian Institute of Science, Bengaluru, India., Horwath J; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA., Davies PK; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA., Stach EA; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA., Li J; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA., Nukala P; Centre for Nanoscience and Engineering, Indian Institute of Science, Bengaluru, India. pnukala@iisc.ac.in., Agarwal R; Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, USA. riteshag@seas.upenn.edu.

Publikováno v: Nature [Nature] 2024 Nov 06. Date of Electronic Publication: 2024 Nov 06.

Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects.

Autor: Huang F; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Saini B; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Wan L; Western Digital, San Jose, California 94305, United States., Lu H; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States., He X; Electron Microscopy Core Facility and Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211, United States., Qin S; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Tsai W; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Gruverman A; Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States., Meng AC; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States., Wong HP; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., McIntyre PC; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States., Wong S; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

Publikováno v: ACS nano [ACS Nano] 2024 Jul 09; Vol. 18 (27), pp. 17600-17610. Date of Electronic Publication: 2024 Jun 25.

Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors.

Autor: Yoo C; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.; Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea., Hartanto J; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Saini B; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Tsai W; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Thampy V; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States., Niavol SS; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States., Meng AC; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States., McIntyre PC; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.; SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.

Publikováno v: Nano letters [Nano Lett] 2024 May 15; Vol. 24 (19), pp. 5737-5745. Date of Electronic Publication: 2024 Apr 30.

Observation of Sub-10 nm Transition Metal Dichalcogenide Nanocrystals in Rapidly Heated van der Waals Heterostructures.

Autor: Kumar P; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Inter-university Microelectronics Center (IMEC), Leuven 3001, Belgium., Chen J; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Meng AC; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States., Yang WD; National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Anantharaman SB; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Low-dimensional Semiconductors Lab, Metallurgical and Materials Engineering, Indian Institute of Technology-Madras, Chennai, Tamilnadu 600036, India., Horwath JP; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Argonne National Laboratory, Lemont, Illinois 60439, United States., Idrobo JC; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States.; Materials Science & Engineering, University of Washington, Seattle, Washington 98195, United States., Mishra H; Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States., Liu Y; Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States., Davydov AV; National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States., Stach EA; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Jariwala D; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Dec 27; Vol. 15 (51), pp. 59693-59703. Date of Electronic Publication: 2023 Dec 13.

Chemical potential gradient induced formation of Kirkendall voids at the epitaxial TiN/MgO interface.

Autor: Zhang X; Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803, USA. wmeng1@lsu.edu., Meng WJ; Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803, USA. wmeng1@lsu.edu., Meng AC; Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, USA. acmeng@missouri.edu.

Publikováno v: Nanoscale [Nanoscale] 2023 Aug 10; Vol. 15 (31), pp. 13086-13093. Date of Electronic Publication: 2023 Aug 10.