Zobrazeno 1 - 10
of 93
pro vyhledávání: '"Mendez, E. E."'
Publikováno v:
ACS Nano, 2011, 5 (10), pp 8124-8130
We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300K and 30K. We have found that the noise amplitude away from
Externí odkaz:
http://arxiv.org/abs/1108.0616
We have found experimentally that the shot noise of the tunneling current $I$ through an undoped semiconductor superlattice is reduced with respect to the Poissonian noise value $2eI$, and that the noise approaches 1/3 of that value in superlattices
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510594
Publikováno v:
Phys. Rev. B 71, 195303 (2005)
We have found experimentally that the shot noise in InAlAs-InGaAs-InAlAs Triple-Barrier Resonant-Tunneling Diodes (TBRTD) is reduced over the 2eI Poissonian value whenever their differential conductance is positive, and is enhanced over 2eI when the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412633
We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling current was
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407375
Autor:
Camino, F. E., Kuznetsov, V. V., Mendez, E. E., Schaepers, Th., Guzenko, V. A., Hardtdegen, H.
We have found experimentally that the noise of ballistic electron transport in a superconductor/semiconductor/superconductor junction is enhanced relative to the value given by the general relation, S_V=2eIR^2coth(eV/2kT), for two voltage regions in
Externí odkaz:
http://arxiv.org/abs/cond-mat/0406650
Publikováno v:
Phys. Rev. B 68, p.035311 (July, 2003)
We have observed that the tunneling magnetoconductance between two-dimensional (2D) electron gases formed at nominally identical InAs-AlSb interfaces most often exhibits two sets of Shubnikov-de Haas oscillations with almost the same frequency. This
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304035
Autor:
Camino, F. E., Kuznetsov, V. V., Mendez, E. E., Gershenson, M. E., Reuter, D., Schafmeister, P., Wieck, A. D.
We have observed suppression of shot noise in the variable-range hopping regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. We have found that the suppression factor F (Fano factor) is approximat
Externí odkaz:
http://arxiv.org/abs/cond-mat/0210167
We have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics. While the no
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209097
Publikováno v:
Phys. Rev. B 66, 195311 (2002)
We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature (T = 4.2K
Externí odkaz:
http://arxiv.org/abs/cond-mat/0207070