Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Men-Ku Lin"'
Publikováno v:
2009 International Conference on Simulation of Semiconductor Processes and Devices.
In this study, reflection properties of sub-wavelength structures (SWS) on silicon nitride (Si3N4) antireflective coatings are investigated. Numerical calculation of SWS reflection based on a rigorous coupled-wave approach is conducted and compared w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a3412ff8a04522b77b59c5fcc65d5da
https://doi.org/10.1109/sispad.2009.5290233
https://doi.org/10.1109/sispad.2009.5290233
Autor:
Jin-Hua Huang, Kartika Chandra Sahoo, Yi Yao Lu, Edward Yi Chang, Chun Wei Chang, Men Ku Lin, Chun Chi Chen
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 4, Iss 7, Pp 680-683 (2009)
Nanoscale Research Letters, Vol 4, Iss 7, Pp 680-683 (2009)
We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12b102324098df1a3bb538bf056a4bab
https://doi.org/10.1007/s11671-009-9297-7
https://doi.org/10.1007/s11671-009-9297-7
Autor:
Sahoo, Kartika Chandra, Men-Ku Lin, Chang, Edward-Yi, Yi-Yao Lu, Chun-Chi Chen, Jin-Hua Huang, Chun-Wei Chang
Publikováno v:
Nanoscale Research Letters; Jul2009, Vol. 4 Issue 7, p680-683, 4p, 2 Diagrams, 1 Chart, 2 Graphs
Publikováno v:
Japanese Journal of Applied Physics. 48:126508
The external quantum efficiency of solar cells can be improved by using textured surface with minimum reflection. We have fabricated nanopillars and nanocone structures on silicon nitride surface by means of self-assembled nickel nano particle masks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14ce3fb863bd26d93c60de196a99fccf
https://doi.org/10.1143/jjap.48.126508
https://doi.org/10.1143/jjap.48.126508
Publikováno v:
2009 9th IEEE Conference on Nanotechnology (IEEE-NANO); 2009, p109-112, 4p
Publikováno v:
2009 International Conference on Simulation of Semiconductor Processes & Devices; 2009, p1-4, 4p
Publikováno v:
Applied Physics Letters; 1/23/2012, Vol. 100 Issue 4, p043504, 3p, 1 Color Photograph, 2 Graphs