Zobrazeno 1 - 10
of 166
pro vyhledávání: '"Memory operation"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 658-662 (2021)
The electrical performance of Z2-FET and memory operations of matrix are demonstrated at high temperatures up to 125 °C. The sharp subthreshold slope is maintained and the reliable operation is ensured within the memory window of 229 mV even though
Externí odkaz:
https://doaj.org/article/d7b6a709f5934e2494166812630cecc1
Autor:
S. R. C. McMitchell, L. Di Piazza, B. Kaczer, Yusuke Higashi, Barry O'Sullivan, Anne S. Verhulst, Nicolo Ronchi, K. Banerjee, M. Suzuki, Dimitri Linten, J. Van Houdt
Publikováno v:
IEEE Transactions on Electron Devices. 67:4911-4917
Ferroelectric (FE)-HfO2-based FETs (FEFETs) are one of the most promising candidates for emerging memories. However, the FE material suffers from a unique reliability phenomenon known as imprint: the coercive voltage shifts during data retention, whi
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:14384-14390
Resistive random-access memory (ReRAM) devices for cross-point array structures require selector elements to suppress the sneak current though neighboring cells. Niobium oxide is a promising candidate for one selector-one ReRAM (1S1R) device because
Publikováno v:
Programming and Computer Software. 46:281-296
Ever increasing software security requirements, the growing size of software projects, and the desire to reduce the time of software development and release require tools for the dynamic analysis that would detect vulnerabilities in С and С++ progr
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 28:307-316
With the advent of Internet of Things (IoT) technologies and availability of a large amount of data, deep learning has been applied in a variety of artificial intelligence (AI) applications. However, sharing personal data using IoT edge devices carri
Autor:
Hyangwoo Kim, Byoung Don Kong, Hyeonsu Cho, Seungho Lee, Hyeon-Tak Kwak, Myunghae Seo, Chang-Ki Baek
Three-terminal (3-T) thyristor random-access memory is explored for a next generation high-density nanoscale vertical cross-point array. The effects of standby voltages on the device are thoroughly investigated in terms of gate-cathode voltage (VGC,S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::88f8b750c6edb310d6a77afc4fdf46e3
https://doi.org/10.21203/rs.3.rs-585213/v2
https://doi.org/10.21203/rs.3.rs-585213/v2
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
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This work was supported in part by the REMINDER European Project under Grant 687931; in part by the Ministry of Trade, Industry, & Energy (MOTIE)under Grant 10080526; and in part by the Korea Semiconductor Research Consortium (KSRC) Support Program f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::97df7fb4fed2be3908f0d62a18e726fb
http://hdl.handle.net/10481/70206
http://hdl.handle.net/10481/70206
Publikováno v:
Maroun, E J, Hansen, H E, Kristensen, A T & Schoeberl, M 2019, ' Time-predictable synchronization support with a shared scratchpad memory ', Microprocessors and Microsystems, vol. 64, pp. 34-42 . https://doi.org/10.1016/j.micpro.2018.09.014
Multicore processors need to communicate when working on shared tasks. In classical systems, this is performed via shared objects protected by locks, which are implemented with atomic operations on the main memory. However, access to shared main memo
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Autor:
Masumi Saitoh, Yuta Kamiya, Kunifumi Suzuki, Kazuhiro Matsuo, Kiwamu Sakuma, Keisuke Takano, Haruka Kusai, Hidenori Miyazawa, Keisuke Akari, Yuuichi Kamimuta, Keiko Ariyoshi, Kota Takahashi, Reika Ichihara
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We re-examine the dominant factors of the memory window (MW) and reliability of HfO 2 FeFET using a new technique to extract both spontaneous polarization $(\mathrm{P}_{\mathrm{s}})$ and interface trap charges $(\mathrm{Q}_{\mathrm{t}})$ by one-time