Zobrazeno 1 - 10
of 1 926
pro vyhledávání: '"Memory devices"'
Autor:
Jing Chen, Ming-Yuan Sun, Zhen-Hua Wang, Zheng Zhang, Kai Zhang, Shuai Wang, Yu Zhang, Xiaoming Wu, Tian-Ling Ren, Hong Liu, Lin Han
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-55 (2024)
Highlights The review provides a comprehensive summary of performance limits of the single two-dimensional transition metal dichalcogenide (2D-TMD) transistor. The review details the two logical expressions of the single 2D-TMD logic transistor, incl
Externí odkaz:
https://doaj.org/article/006fd852223143d28fc0faf66d3d4905
Autor:
Ryun‐Han Koo, Wonjun Shin, Jangsaeng Kim, Jiyong Yim, Jonghyun Ko, Gyuweon Jung, Jiseong Im, Sung‐Ho Park, Jae‐Joon Kim, Suraj S Cheema, Daewoong Kwon, Jong‐Ho Lee
Publikováno v:
Advanced Science, Vol 11, Iss 43, Pp n/a-n/a (2024)
Abstract Ferroelectric (FE) materials are key to advancing electronic devices owing to their non‐volatile properties, rapid state‐switching abilities, and low‐energy consumption. FE‐based devices are used in logic circuits, memory‐storage d
Externí odkaz:
https://doaj.org/article/f1771b682873445098c8e56ecf070af9
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI3 perovskite (800 nm) films with structure FTO/
Externí odkaz:
https://doaj.org/article/29a578ff1b7f4a44b82bd69a7dcfe06e
Autor:
Dongsu Kim, Heejae Jeong, Goeun Pyo, Su Jin Heo, Seunghun Baik, Seonhyoung Kim, Hong Soo Choi, Hyuk‐Jun Kwon, Jae Eun Jang
Publikováno v:
Advanced Science, Vol 11, Iss 28, Pp n/a-n/a (2024)
Abstract Ferroelectric field‐effect transistors (FeFETs) are increasingly important for in‐memory computing and monolithic 3D (M3D) integration in system‐on‐chip (SoC) applications. However, the high‐temperature processing required by most
Externí odkaz:
https://doaj.org/article/ba8fd90c58ac4508bb4d846e3c9db3b3
Publikováno v:
Informatika, Vol 20, Iss 4, Pp 7-23 (2023)
Objectives. The aim of the work is to develop and analyze a formal model for describing complex linked coupling faults of memory devices and to formulate the necessary and sufficient conditions for their detection. The relevance of these studies lies
Externí odkaz:
https://doaj.org/article/5a8666d2fae74ed587e753b719dbef25
Akademický článek
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Publikováno v:
Micromachines, Vol 15, Iss 9, p 1115 (2024)
Polymer dielectric materials have recently attracted attention for their versatile applications in emerging electronic devices such as memory, field-effect transistors (FETs), and triboelectric nanogenerators (TENGs). This review highlights the advan
Externí odkaz:
https://doaj.org/article/16ccc2f5fdb04aa7a1bd6e357b2886f7
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 3, Pp n/a-n/a (2024)
[001]‐oriented NaNbO3 films are deposited on Sr2Nb3O10/TiN/SiO2/Si substrates at 300 °C. The Sr2Nb3O10 nanosheets are used as a template to form crystalline NaNbO3 films at low temperature. The NaNbO3 films deposited on one Sr2Nb3O10 monolayer exh
Externí odkaz:
https://doaj.org/article/04954d622db24073b7a376a793a0c607
Akademický článek
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Publikováno v:
Crystals, Vol 14, Iss 3, p 249 (2024)
This study delved into the correlation between the chain length of PEG polymerizable oligomers and the electro-optical properties exhibited by the resultant PDLC films. A range of di(meth)acrylate oligomers derived from polyethylene glycol with varyi
Externí odkaz:
https://doaj.org/article/97ecae0e75004338bf3f30d607d4c984