Zobrazeno 1 - 10
of 500
pro vyhledávání: '"Memistor"'
Autor:
Victor Erokhin
Publikováno v:
Fundamentals of Organic Neuromorphic Systems ISBN: 9783030794910
The chapter is dedicated to the conceptual description of memristive devices as key elements of neuromorphic systems. Starting from the definition of the memristor, proposed by L. Chua in 1971, a comparison of this device with other resistance switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bcbc1569a9fc5b83d595a387a7c51c0
https://doi.org/10.1007/978-3-030-79492-7_1
https://doi.org/10.1007/978-3-030-79492-7_1
Autor:
Sergei N. Chvalun, Vyacheslav A. Demin, Yulia N. Malakhova, Andrey V. Emelyanov, Nikita V. Prudnikov, Victor Erokhin, A. N. Korovin
Publikováno v:
Nanotechnologies in Russia
14 (2019): 380–384. doi:10.1134/S1995078019040104
info:cnr-pdr/source/autori:Prudnikov N.V.; Korovin A.N.; Emelyanov A.V.; Malakhova Y.N.; Demin V.A.; Chvalun S.N.; Erokhin V.V./titolo:Comparison of Polythophene Memistor Devices Manufactured by Layering and Centrifugal Methods/doi:10.1134%2FS1995078019040104/rivista:Nanotechnologies in Russia (Print)/anno:2019/pagina_da:380/pagina_a:384/intervallo_pagine:380–384/volume:14
14 (2019): 380–384. doi:10.1134/S1995078019040104
info:cnr-pdr/source/autori:Prudnikov N.V.; Korovin A.N.; Emelyanov A.V.; Malakhova Y.N.; Demin V.A.; Chvalun S.N.; Erokhin V.V./titolo:Comparison of Polythophene Memistor Devices Manufactured by Layering and Centrifugal Methods/doi:10.1134%2FS1995078019040104/rivista:Nanotechnologies in Russia (Print)/anno:2019/pagina_da:380/pagina_a:384/intervallo_pagine:380–384/volume:14
The main characteristics of memristive elements based on polythiophene made by Langmuir-Schaefer and spin-coating methods have been compared. The stability of the elements for more than 500 cycles of electric rewriting for both methods has been demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddbf99a52794c79c0baaa74175e0fd15
https://doi.org/10.1134/s1995078019040104
https://doi.org/10.1134/s1995078019040104
Publikováno v:
LASCAS
Memristive crossbar architecture with high device density is the most preferred structure to realize memristor based in-memory computing system. Typically, synthesized gate-level netlist of NOR and NOT gates is mapped to the memristive crossbar archi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6060a56d2d100595527ced796c88b50
https://doi.org/10.1109/lascas45839.2020.9068963
https://doi.org/10.1109/lascas45839.2020.9068963
Publikováno v:
IEEE Transactions on Cognitive and Developmental Systems. 10:1133-1142
This paper proposes a novel memistor-based neuron circuit, in which the memristor-CMOS hybrid synaptic circuit simply utilizes the positive voltage to change the memristance. At the same time, in order to obtain the memristance and output voltage cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b261958335224475630a7bbfc66108ec
https://doi.org/10.1109/tcds.2018.2859303
https://doi.org/10.1109/tcds.2018.2859303
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 37:1505-1509
The multivalued memory achieved with memristors is a promising approach to enhance the memory density. Effective and compact methods of reading and writing for multivalued memories can significantly improve the performance of circuits. In this paper,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ee1e9248cd612fff494e6bd124b5f0
https://doi.org/10.1109/tcad.2017.2753199
https://doi.org/10.1109/tcad.2017.2753199
Publikováno v:
Optik. 156:1-7
Many potential applications are developed towards the new memristive systems. However, these systems are too complicated to produce the real elements, the simplifications of memristive systems are interesting to our future applications. The simplest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c49009172adac047115502bac842297
https://doi.org/10.1016/j.ijleo.2017.09.011
https://doi.org/10.1016/j.ijleo.2017.09.011
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 65:246-250
In this brief, we propose a novel locally active memristor based on a voltage-controlled generic memristor model and use the analysis methods of standard nonlinear theory to analyze its characteristics and illustrate the concept of local activity via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecb404a83b5361820018b8cd25e8ec25
https://doi.org/10.1109/tcsii.2017.2735448
https://doi.org/10.1109/tcsii.2017.2735448
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 65:677-686
Memristors are promising components for applications in nonvolatile memory, logic circuits, and neuromorphic computing. In this paper, a novel circuit for memristor-based multilayer neural networks is presented, which can use a single memristor array
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f8b6f42f4feb610ac8a7973368bfa5
https://doi.org/10.1109/tcsi.2017.2729787
https://doi.org/10.1109/tcsi.2017.2729787
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 37(2)
Alternatives to CMOS logic circuit implementations are under research for future scaled electronics. Memristor crossbar-based logic circuit is one of the promising candidates to at least partially replace CMOS technology, which is facing many challen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abfb5a0e4e45f60400e48ceb71cb953f
https://doi.org/10.1109/tcad.2017.2695880
https://doi.org/10.1109/tcad.2017.2695880
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:355-366
Because of their resistive switching properties and ease of controlling the resistive states, memristors have been proposed in nonvolatile storage as well as logic design applications. Memristors can be fabricated in a crossbar and suitable voltages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9966ef58cd04971accd19d0acea0bd8b
https://doi.org/10.1109/tvlsi.2017.2763171
https://doi.org/10.1109/tvlsi.2017.2763171