Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Melvy F. Miller"'
Publikováno v:
physica status solidi (b). 233:31-38
A phenomenological model of magnetic nanoparticle composites consisting of ideal lossless particles with identical properties embedded in a non-magnetic matrix has been developed. The input material parameter for this model include the saturation mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab31838a4962df63d1d5e3bcedb46207
https://doi.org/10.1002/1521-3951(200209)233:1<31::aid-pssb31>3.0.co
https://doi.org/10.1002/1521-3951(200209)233:1<31::aid-pssb31>3.0.co
Autor:
Sergio Pacheco, Shun-Meen Kuo, C. Ramiah, Scott D. Marshall, M. Watts, Lianjun Liu, Qiang Li, Melvy F. Miller, P. Piel
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
An integrated passive device (IPD) technology has been developed for wireless basestations applications. The technology features 6-mil GaAs substrates, airbridges for MIM capacitors, thick gold metallization for high Q inductors, and through-wafer vi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1035208490e82f0a620d4fd2ea3ace
https://doi.org/10.1109/mwsym.2007.380339
https://doi.org/10.1109/mwsym.2007.380339
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
In order to achieve highest possible gain and lowest input reflection coefficient, a conjugate match at the input of power transistors is desired. Unfortunately, as will be shown in this paper, such an input termination is not adequate for best linea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4f37055d16664e289e49d49bcd3b28
https://doi.org/10.1109/mwsym.2007.380277
https://doi.org/10.1109/mwsym.2007.380277
Autor:
M. Raymond, T. Remmell, E. D. Luckowski, S. Braithwaite, D. Roberts, J. Walls, D. Qualls, Melvy F. Miller, M. Martin, Rampi Ramprasad
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
TDDB testing of MIM capacitors with various thickness plasma silicon nitride dielectric yielded high quality lifetime data, with very large Weibull betas and consistency between wafer-scale and package level tests. An excellent fit of the data to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853b75e66fd3293dd3446d4a23d29a13
https://doi.org/10.1109/relphy.2004.1315395
https://doi.org/10.1109/relphy.2004.1315395
Autor:
Melvy F. Miller, Tom Remmel, Mark V. Raymond, P. Zurcher, Michael F. Petras, Doug Roberts, T. Sparks, A. Duvallet, C. Happ, M. Tarabbia, Rashaunda Henderson, S. Straub, B. Steimle
Publikováno v:
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).
Metal thin film resistors have been integrated into a damascene-copper multilayer metallization system for mixed-signal BiCMOS technology platforms. The thin film process can be adjusted to achieve resistors with very low temperature coefficients, hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b714e6e7df756fdc80251502a954c221
https://doi.org/10.1109/smic.2001.942343
https://doi.org/10.1109/smic.2001.942343
Autor:
J. Mendonca, B. Steimle, Tom Remmel, M. Tarabbia, M. Kim, Melvy F. Miller, P. Alluri, Rashaunda Henderson, S. Straub, Peter Zurcher, Doug Roberts, T. Sparks, H. Thibieroz, C. Happ, A. Duvallet, Peir Chu, Mark V. Raymond, M. Petras, J. Stipanuk
Publikováno v:
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5e26933113a04f2477e3cd1b10b53a
https://doi.org/10.1109/iedm.2000.904281
https://doi.org/10.1109/iedm.2000.904281