Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Melvin P. Zussman"'
Autor:
D. Kumar, J. T. Wetzel, C. Ryu, Paul H. Townsend, T. Tanabe, Melvin P. Zussman, Alvin Leng Sun Loke, Raymond Nicholas Vrtis, S. Simon Wong
Publikováno v:
IEEE Transactions on Electron Devices. 46:2178-2187
This paper addresses the drift of copper ions (Cu/sup +/) in various low-permittivity (low-/spl kappa/) polymer dielectrics to identify copper barrier requirements for reliable interconnect integration in future ULSI. Stressing at temperatures of 150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80d3979ebf61b34b6b68718f5caa0eb
https://doi.org/10.1109/16.796294
https://doi.org/10.1109/16.796294
Autor:
Michael Topper, T. Fritzsch, Kai Zoschke, Matthew Souter, Oswin Ehrmann, Melvin P. Zussman, Hermann Oppermann, Thorsten Fischer, Toshiaki Itabashi, K-D. Lang
Publikováno v:
2012 IEEE 62nd Electronic Components and Technology Conference.
Temporary wafer bonding for thin wafer processing is one of the key technologies of 3D system integration. In this context we introduce the polyimide material HD3007 which is suitable for temporary bonding of silicon wafers to carrier wafers by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d7c9e70e8c82f91cd91ff3182443770
https://doi.org/10.1109/ectc.2012.6248966
https://doi.org/10.1109/ectc.2012.6248966
Autor:
Hiroyuki Ishida, Toshiaki Itabashi, Melvin P. Zussman, Thorsten Fischer, Michael Topper, Masashi Kotani, Kai Zoschke
Publikováno v:
3DIC
Most advanced IC devices including packaging and substrates are requiring smart solution for wafer thinning/handling as well as stacking techniques to enhance performance and/or achieving ultimate assembling density. However existence thinning and ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb2f7cf21b76dc6f8f1e0ef40d25b85
https://doi.org/10.1109/3dic.2012.6263003
https://doi.org/10.1109/3dic.2012.6263003
Autor:
Melvin P. Zussman, Toshiaki Itabashi
Publikováno v:
2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).
Recent advanced devices including packaging and substrates required smart solution for wafer thinning and handling techniques. In addition to 3D-TSV packages, CIS, SiP, power devices, MEMS and SI interposer technologies require thinned substrates wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c868c1b74be990e99294efc90d515d5
https://doi.org/10.1109/ectc.2010.5490702
https://doi.org/10.1109/ectc.2010.5490702
Autor:
J. T. Wetzel, S. Simon Wong, N. Talwalkar, Paul H. Townsend, Raymond Nicholas Vrtis, Alvin Leng Sun Loke, Tsuneaki Tanabe, Melvin P. Zussman, Devendra Kumar
Publikováno v:
MRS Proceedings. 565
The industry is strongly interested in integrating low-κ dielectrics with Damascene copper. Otherwise, with conventional materials, interconnects cannot continue to scale without limiting circuit performance. Integration of copper wiring with silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::595ae81cc24ad4152a6c6cc297846c5c
https://doi.org/10.1557/proc-565-173
https://doi.org/10.1557/proc-565-173
Autor:
Alvin L. S. Loke, S. Simon Wong, Niranjan A. Talwalkar, Jeffrey T. Wetzel, Paul H. Townsend, Tsuneaki Tanabe, Raymond N. Vrtis, Melvin P. Zussman, Devendra Kumar
Publikováno v:
MRS Proceedings. 564
The industry is strongly interested in integrating low–κ dielectrics with Damascene copper. Otherwise, with conventional materials, interconnects cannot continue to scale without limiting circuit performance. Integration of copper wiring with sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f82dfcd33623da25e87506d0797fcd10
https://doi.org/10.1557/proc-564-535
https://doi.org/10.1557/proc-564-535
Autor:
Alvin Leng Sun Loke, Raymond Nicholas Vrtis, Paul H. Townsend, J. T. Wetzel, Melvin P. Zussman, S. Simon Wong
Publikováno v:
MRS Proceedings. 511
The recent demonstrations of manufacturable multilevel Cu metallization have heightened interest to integrate Cu and low-K dielectrics for future integrated circuits. For reliable integration of both materials, Cu may need to be encapsulated by barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40919d4444b641de992a8ab5ca66de57
https://doi.org/10.1557/proc-511-317
https://doi.org/10.1557/proc-511-317
Autor:
Melvin P. Zussman
Publikováno v:
Electronics Packaging Forum ISBN: 9789401066815
Dielectric materials used for electronics packaging serve mechanical, thermal and electrical functions. In functioning as electrical insulation, a dielectric can be characterized by its dielectric constant, with the related properties of volume resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2072522ed4c76c619394d0e2eedd496
https://doi.org/10.1007/978-94-009-0439-2_8
https://doi.org/10.1007/978-94-009-0439-2_8
Autor:
David A. Tirrell, Melvin P. Zussman
Publikováno v:
Journal of Polymer Science Part A: Polymer Chemistry. 26:313-319
The kinetics of the repeating unit isomerization of poly[(chloromethyl)thiirane] have been determined at four temperatures in the absence of solvent. The reaction can be treated as a reversible first-order process with rate constants and activation e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4daab17ec481f08a1a71018abd02bdac
https://doi.org/10.1002/pola.1988.080260130
https://doi.org/10.1002/pola.1988.080260130
Autor:
David A. Tirrell, Melvin P. Zussman
Publikováno v:
Polymer Bulletin. 7:439-443
The homopolymerization of 3-chlorothietane was accomplished using a variety of cationic initiators. Most successful was bulk polymerization at 0°C with ethyl trifiuoromethanesulfonate as initiator and with rapid stirring of the polymerizing mixture.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e85dfc7657833271ac8dfeba6485aa7
https://doi.org/10.1007/bf00254368
https://doi.org/10.1007/bf00254368