Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Melvin K. Benedict"'
Autor:
Peter Vettiger, Otto Voegeli, P. Wolf, H.K. Seitz, E.C. Cahoon, Melvin K. Benedict, A. Moser, P. Buchmann, K. Datwyler, H. P. Dietrich, Gian-Luca Bona, David J. Webb
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1319-1331
A concept for full-wafer processing (FWP) and full-wafer testing (FWT) for semiconductor laser fabrication in the AlGaAs-GaAs material system is presented. The approach is based on chemically assisted ion beam etching for the laser-mirror formation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::158a6674d7d60e4a1d3a4ec2d6df611d
https://doi.org/10.1109/3.89949
https://doi.org/10.1109/3.89949
Autor:
Otto Voegeli, Gian-Luca Bona, Peter Vettiger, Michael Moser, H. P. Dietrich, David J. Webb, Peter Buchmann, Melvin K. Benedict, G. Sasso, K. Daetwyler
Publikováno v:
SPIE Proceedings.
The fabrication of etched mirrors for AlGaAs semiconductor lasers is described. The coating techniques for the passivation and reflectivity modification of the etched mirror surfaces are presented. Measurements on coated lasers show excellent beam qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcf7192fa32d52084f39b95d8eed7412
https://doi.org/10.1117/12.43808
https://doi.org/10.1117/12.43808
Publikováno v:
SPIE Proceedings.
There are several characteristics of laser diodes that influence the performance of a magneto-optical (MO) storage device. A few of the important optical characteristics include divergence angles, wavelength, astigmatism, polarization, and power outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc9128b363c671b1a6d4d7ac29d7b74a
https://doi.org/10.1117/12.22045
https://doi.org/10.1117/12.22045
Autor:
G. L. Bona, N. Cahoon, Melvin K. Benedict, G. Sasso, K. Datwyler, Otto Voegeli, A. Moser, Peter Vettiger, P. Wolf, H.K. Seitz, P. Buchmann, H. P. Dietrich, David J. Webb
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:2886
A new approach for large‐scale semiconductor laser fabrication is presented. In this ‘‘full‐wafer processing and testing’’ concept, the mirrors are fabricated, not by cleaving the wafer but by forming them by means of a chemically assiste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a88e64e8529e467606c86e8562344d30
https://doi.org/10.1116/1.585619
https://doi.org/10.1116/1.585619
Autor:
A. J. Tzou, Kenneth J. Giewont, Melvin K. Benedict, Charles B. Morrison, Anthony D. Gleckler, Dennis Wayne Fried
Publikováno v:
SPIE Proceedings.
For high-performance optical data storage applications, AIGaAs/GaAs diode lasers were stressed at various power levels, temperatures, and operating conditions. The devices tested were V-channeled structures mounted with the junction side down. These
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce9c52e28f14e37a4d0ce6069aa49c94
https://doi.org/10.1117/12.976387
https://doi.org/10.1117/12.976387
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