Zobrazeno 1 - 10
of 481
pro vyhledávání: '"Melo O"'
Autor:
Melo O E
Publikováno v:
Revista Methodo, Vol 7, Iss 4 (2022)
El Rector de la universidad, Padre Fernando Storni S.J, estaba convencido que, a una provincia agropecuaria como Córdoba, los ingenieros agrónomos le serían de gran utilidad para su desarrollo futuro, no había hasta el momento ninguna facultad en
Externí odkaz:
https://doaj.org/article/a23dc361cd8741a3bd5923a3113a9b7b
It has been argued that the models used to analyze data from crossover designs are not appropriate when simple carryover effects are assumed. In this paper, the estimability conditions of the carryover effects are found, and a theoretical result that
Externí odkaz:
http://arxiv.org/abs/2402.16362
Experimental crossover designs are widely used in medicine, agriculture, and other areas of the biological sciences. Due to the characteristics of the crossover design, each experimental unit has longitudinal observations and the presence of drag eff
Externí odkaz:
http://arxiv.org/abs/2304.02440
Publikováno v:
Statistical Methods in Medical Research. 2023;1(1-28)
A model for cross-over designs with repeated measures within each period was developed. It is obtained using an extension of generalized estimating equations that includes a parametric component to model treatment effects and a non-parametric compone
Externí odkaz:
http://arxiv.org/abs/2209.05413
In this study, we propose a family of correlation structures for crossover designs with repeated measures for both, Gaussian and non-Gaussian responses using generalized estimating equations (GEE). The structure considers two matrices: one that model
Externí odkaz:
http://arxiv.org/abs/2205.01281
Autor:
G. Zayas-Bazán, P., de Melo, O., Gutierrez Z-B, K., Santana, G., Santoyo-Salazar, J., Romero-Ibarra, J. Esaú, González, J.C., Matinaga, F.M., Contreras-Puente, G.
Publikováno v:
In Materials Science in Semiconductor Processing July 2024 177
Autor:
de Melo, O., Torres_Costa, V., Gonzalez, Y., Ruediger, A., de Melo, C., Ghanbaja, J., Horwat, D., Escobosa, A., Concepcion, O., Santana, G., Ramos, E.
Publikováno v:
Applied Surface Science 514 (2020): Article number 145875
The epitaxy of MoO2 on c_plane sapphire substrates is examined. A theoretical approach, based on density functional theory calculations of the strain energy, allowed to predict the preferred layer/substrate epitaxial relationships. To test the result
Externí odkaz:
http://arxiv.org/abs/2104.10246
Autor:
de Melo, O., Gonzalez, Y., Climent-Font, A., Galan, P., Ruediger, A., Sanchez, M., Calvo, C., Santana, G., Torres-Costa, V.
Publikováno v:
J. Phys.: Condens. Matter 31 295703 (2019)
Chemically _ driven isothermal close space vapour transport was used to prepare pure MoO2 films which were eventually converted to MoO3 by annealing in air. According to temperature_dependent Raman measurements, the MoO2/MoO3 phase transformation was
Externí odkaz:
http://arxiv.org/abs/2104.10245
Publikováno v:
Appl. Phys. Lett. 82, 2003, 43
A detailed reflection high-energy electron diffraction analysis shows relevant features of the lattice parameter relaxation of CdSe thin films grown in a layer-by-layer mode onto ZnSe. In situ investigations of different azimuths show a clear lattice
Externí odkaz:
http://arxiv.org/abs/1910.02943
Publikováno v:
J. Appl. Phys. 96, 2004, 7164
The mechanisms controlling the growth rate and composition of epitaxial CdTe and CdZnTe films were studied. The films were grown by isothermal closed space configuration technique. A GaAs 100 substrate was exposed sequentially to the elemental source
Externí odkaz:
http://arxiv.org/abs/1910.02944