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The diffusion and gettering of oxygen are investigated after low-energy arsenic implantation and furnace annealing of SiO2/Si structures. Secondary ion mass spectrometry was used for examination of arsenic and oxygen depth profiles. It is shown that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::f9d05161f84f48c889638e5c1f952899
http://essuir.sumdu.edu.ua/handle/123456789/35166
http://essuir.sumdu.edu.ua/handle/123456789/35166