Zobrazeno 1 - 10
of 338
pro vyhledávání: '"Melnikov M"'
Autor:
Melnikov, M. Yu., Smirnov, D. G., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an ord
Externí odkaz:
http://arxiv.org/abs/2409.06686
Publikováno v:
Appl. Phys. Lett. 125, 153102 (2024)
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapp
Externí odkaz:
http://arxiv.org/abs/2405.18229
Publikováno v:
Phys. Rev. B 109, L041114 (2024)
We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility S
Externí odkaz:
http://arxiv.org/abs/2310.03145
Autor:
Melnikov, M. Yu., Shakirov, A. A., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 13, 17364 (2023)
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effect
Externí odkaz:
http://arxiv.org/abs/2304.04272
Publikováno v:
JETP Lett. 116, 156 (2022)
We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/S
Externí odkaz:
http://arxiv.org/abs/2204.12565
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M. M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, Amy Y. X., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 12, 5080 (2022)
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional elec
Externí odkaz:
http://arxiv.org/abs/2106.05927
Autor:
Dolgopolov, V. T., Melnikov, M. Yu., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 103, 161302 (2021)
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The
Externí odkaz:
http://arxiv.org/abs/2101.05876
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, A. Y. X., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 102, 081119(R) (2020)
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at
Externí odkaz:
http://arxiv.org/abs/2004.14968
Autor:
Melnikov, M. Yu., Shashkin, A. A., Dolgopolov, V. T., Huang, S. -H., Liu, C. W., Zhu, A. Y. X., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 101, 045302 (2020)
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron sy
Externí odkaz:
http://arxiv.org/abs/1904.10413
Autor:
Melnikov, M. Yu., Shashkin, A. A., Dolgopolov, V. T., Zhu, Amy Y. X., Kravchenko, S. V., Huang, S. -H., Liu, C. W.
Publikováno v:
Phys. Rev. B 99, 081106(R) (2019); Erratum: Phys. Rev. B 107, 039902 (2023)
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samp
Externí odkaz:
http://arxiv.org/abs/1808.10063