Plasma etching of HfO 2 in metal gate CMOS devices

Autor: Sungauer, E., Mellhaoui, X., Pargon, E., Joubert, O.

Publikováno v: In Microelectronic Engineering 2009 86(4):965-967

Silicon cryo-etching of deep holes

Autor: Tillocher, T., Dussart, R., Mellhaoui, X., Lefaucheux, P., Boufnichel, M., Ranson, P.

Publikováno v: In Microelectronic Engineering 2007 84(5):1120-1123

SiOxFy passivation layer in silicon cryoetching.

Autor: Mellhaoui, X., Dussart, R., Tillocher, T., Lefaucheux, P., Ranson, P., Boufnichel, M., Overzet, L. J.

Publikováno v: Journal of Applied Physics; 11/15/2005, Vol. 98 Issue 10, p104901, 10p, 7 Diagrams, 6 Graphs

Plasma etching of HfO2 in metal gate CMOS devices

Autor: Sungauer, E., Mellhaoui, X., Pargon, E., Joubert, O., Lill, T.

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2009, pp.86, (2009), 965-967
Microelectronic Engineering, 2009, pp.86, (2009), 965-967

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6a895df3626a693fdedc75bfec5d89a3
https://hal.archives-ouvertes.fr/hal-00454175

Impact of HBr and Ar cure plasma treatments on 193 nm photoresists

Autor: Bazin, A., Pargon, E., Mellhaoui, X., Perret, D., Mortini, B., Joubert, O.

Publikováno v: Proceedings of the SPIE-Advances in Resist Materials and Processing Technology XXV
Proceedings of the SPIE-Advances in Resist Materials and Processing Technology XXV, 2008, pp.Volume 6923 (2008) 692337-1-8

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::86b1789517bd57f814457f541e21bc0c
https://hal.archives-ouvertes.fr/hal-00466363