The passivation layer formation in the cryo-etching plasma process

Autor: Dussart, R., Mellhaoui, X., Tillocher, T., Lefaucheux, P., Boufnichel, M., Ranson, P.

Publikováno v: In Microelectronic Engineering 2007 84(5):1128-1131

Electrical properties of low-dielectric-constant films prepared by PECVD in O 2/CH 4/HMDSO

Autor: Borvon, G ^*, Goullet, A, Mellhaoui, X, Charrouf, N, Granier, A

Publikováno v: In Materials Science in Semiconductor Processing 2002 5(2):279-284

Proposals for Next-Generation Eco-Friendly Non-Flammable Refrigerants for a −100 °C Semiconductor Etching Chiller Based on 4E (Energy, Exergy, Environmental, and Exergoeconomic) Analysis.

Autor: Jung, Hye-In¹ (AUTHOR) sonch@pknu.ac.kr, Son, Chang-Hyo¹ (AUTHOR), Lee, Joon-Hyuk¹ (AUTHOR) joonhyukcap3@naver.com

Publikováno v: Energies (19961073). Oct2024, Vol. 17 Issue 19, p4969. 22p.

Plasma etching of HfO2 in metal gate CMOS devices

Autor: Sungauer, E., Mellhaoui, X., Pargon, E., Joubert, O., Lill, T.

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2009, pp.86, (2009), 965-967
Microelectronic Engineering, 2009, pp.86, (2009), 965-967

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6a895df3626a693fdedc75bfec5d89a3
https://hal.archives-ouvertes.fr/hal-00454175

Impact of HBr and Ar cure plasma treatments on 193 nm photoresists

Autor: Bazin, A., Pargon, E., Mellhaoui, X., Perret, D., Mortini, B., Joubert, O.

Publikováno v: Proceedings of the SPIE-Advances in Resist Materials and Processing Technology XXV
Proceedings of the SPIE-Advances in Resist Materials and Processing Technology XXV, 2008, pp.Volume 6923 (2008) 692337-1-8

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::86b1789517bd57f814457f541e21bc0c
https://hal.archives-ouvertes.fr/hal-00466363