Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Melisa Ekin Gulseren"'
Publikováno v:
IEEE Access, Vol 12, Pp 190120-190133 (2024)
The next generation of infrared (IR) sensors may enable unprecedented applications in fields like spectroscopy, health monitoring, and communication systems. For instance, metasurface-enhanced micro-electromechanical system (MEMS)-based IR sensors ha
Externí odkaz:
https://doaj.org/article/01ab5fa735e24a9daf441cb5a3c8d77c
Autor:
Gokhan Kurt, Melisa Ekin Gulseren, Gurur Salkim, Sertac Ural, Omer Ahmet Kayal, Mustafa Ozturk, Bayram Butun, Mehmet Kabak, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://doaj.org/article/5f220c2dc96e4d1191d32b2a27c4b853
Publikováno v:
Enhanced Spectroscopies and Nanoimaging 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77ddd88792cbc96fa6683d95cfb5bd1
https://doi.org/10.1117/12.2633267
https://doi.org/10.1117/12.2633267
Autor:
Sertaç Ural, Ömer Ahmet Kayal, Berkay Bozok, Bayram Butun, Mustafa Kemal Öztürk, Gokhan Kurt, Melisa Ekin Gulseren, Ekmel Ozbay
Publikováno v:
Proceedings Gallium Nitride Materials and Devices XIV
Date of Conference: 2-7 February 2019 Conference name: SPIE OPTO, 2019 A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9739f10407175a6399ba5cba2e143832
https://hdl.handle.net/11693/52938
https://hdl.handle.net/11693/52938
Autor:
Gokhan Kurt, Ekmel Ozbay, Turkan Gamze Ulusoy Ghobadi, Mustafa Kemal Öztürk, Gurur Salkim, Bayram Butun, Melisa Ekin Gulseren, Amir Ghobadi
Publikováno v:
Materials Research Express
In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in the gate lag performance of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e9d08cd0821ca3d8ad62ad327290aba
https://aperta.ulakbim.gov.tr/record/74693
https://aperta.ulakbim.gov.tr/record/74693
Autor:
Gokhan Kurt, Turkan Gamze Ulusoy Ghobadi, Sertaç Ural, Ekmel Ozbay, Ömer Ahmet Kayal, Mustafa Kemal Öztürk, Bayram Butun, Mehmet Kabak, Melisa Ekin Gulseren
Publikováno v:
Solid-State Electronics
We demonstrate the electrical performances of an AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (Ig). A low gate leakage current as low as the order of 10−11 A/mm was achieved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f61b842f730d9abaa3873e7271dd71b
https://aperta.ulakbim.gov.tr/record/70709
https://aperta.ulakbim.gov.tr/record/70709
Autor:
Mustafa Kemal Öztürk, Bayram Butun, Gokhan Kurt, Mehmet Kabak, Sertaç Ural, Ömer Ahmet Kayal, Melisa Ekin Gulseren, Gurur Salkim, Ekmel Ozbay
Publikováno v:
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019)
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c2a57be25dd96f862b1632d63e6b6a2
https://aperta.ulakbim.gov.tr/record/72091
https://aperta.ulakbim.gov.tr/record/72091
Autor:
Melisa Ekin Gulseren, Gokhan Kurt, Turkan Gamze Ulusoy Ghobadi, Amir Ghobadi, Gurur Salkim, Mustafa Ozturk, Bayram Butun, Ekmel Ozbay
Publikováno v:
Materials Research Express; Sep2019, Vol. 6 Issue 9, p1-1, 1p
Publikováno v:
Proceedings of SPIE; 6/20/2022, Vol. 12203, p1220305-1220305, 1p