Generalized semi-analytical design methodology of class-E outphasing power amplifier

Autor: Mustafa Acar, Domine M. W. Leenaerts, Ronghui Zhang, Melina Apostolidou, Mark P. van der Heijden

Publikováno v: IEEE Transactions on Circuits and Systems I: Regular Papers, 61(10):6856234, 2951-2960. Institute of Electrical and Electronics Engineers

This paper presents a time domain generalized semi-analytical solution for the class-E outphasing power amplifier (OPA). Instead of assuming ideal voltage sources for active devices, the proposed class-E OPA model obtains the circuit elements by anal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f97ad258b87eb83a4405d8f206e899a
https://research.tue.nl/en/publications/ae5cda18-c8e5-42f7-9e8c-d18ea1665b7c

Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continnuous class-e modes theory

Autor: Christian Fager, D.M.W. Leenaerts, Melina Apostolidou, Rik Jos, Mustafa Acar, Mustafa Ozen, M.P. van der Heijden

Publikováno v: Proceedings of the 2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 01-03 June 2014, Tampa, Florida, 243-246
STARTPAGE=243;ENDPAGE=246;TITLE=Proceedings of the 2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 01-03 June 2014, Tampa, Florida

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The protot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f17f69d5ce4a5f44f38eaba228f06e40
https://doi.org/10.1109/RFIC.2014.6851709

Concurrent L- and S-band class-E power amplifier in 65nm CMOS

Autor: Domine M. W. Leenaerts, Mark P. van der Heijden, Ronghui Zhang, Mustafa Acar, Melina Apostolidou

Publikováno v: Proceedings of the Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Canada, 217-220
STARTPAGE=217;ENDPAGE=220;TITLE=Proceedings of the Radio Frequency Integrated Circuits Symposium (RFIC), 17-19 June 2012, Montreal, Canada

A 65nm CMOS concurrent dual-band two-stage class-E power amplifier (PA) using high voltage extended-drain devices is presented. To implement sub-optimum class-E load impedance at L-band (1.0-1.3GHz) and S-band (2.8-3.1GHz), a concurrent transmission-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c3994e3f0d4adea59e1c4e481eaa566
https://doi.org/10.1109/rfic.2012.6242267

A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz

Autor: Melina Apostolidou, Mustafa Acar, Leo C. N. de Vreede, Domine M. W. Leenaerts, Mark P. van der Heijden, J. Sonsky, David A. Calvillo-Cortes

Publikováno v: ISSCC

State-of-the-art wireless communication radios are implemented in deep-submi-cron CMOS, including the RF power amplifiers (PAs). However, in wireless infrastructure systems, the RF PA is often realized in an LDMOS or a compound technology to obtain t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::866fd44add2c16d7bd51477a4df6aeaa
https://doi.org/10.1109/isscc.2011.5746218

A 65nm CMOS 30dBm class-E RF power amplifier with 60% power added efficiency

Autor: Melina Apostolidou, M.P. van der Heijden, J. Sonsky, Domine M. W. Leenaerts, A. Heringa, I. Volokhine

Publikováno v: 2008 IEEE Radio Frequency Integrated Circuits Symposium.

A 30 dBm single-ended class-E RF power amplifier (PA) is fabricated in 65 nm CMOS technology. The PA is a cascode stage formed by a standard thin-oxide device and a high voltage extended-drain thick-oxide device. Both devices are implemented in a sta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::10e71d985c18158624f2711f92e43c25
https://doi.org/10.1109/rfic.2008.4561404