Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Melih Korkmaz"'
Publikováno v:
Journal of Composite Materials. 56:3185-3195
Man–made fibers like carbon or glass are main components for fiber-reinforced polymer composites thanks to their high strength and stiffness values. However, man-made fibers are not eco-friendly and can hardly be recycled in the nature. Using a hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18de0cda865fcff99b47b7a6582f483e
https://doi.org/10.1177/00219983221106250
https://doi.org/10.1177/00219983221106250
Autor:
Melih Korkmaz, B. Aslan
Publikováno v:
Applied Surface Science. 362:244-249
WOS: 000368657900034
Raman scattering study on a group of InAs/GaSb superlattice (SL) samples where the strain is systematically changed from tensile to compressive regime is presented. The effect of the lattice mismatch between the substrate an
Raman scattering study on a group of InAs/GaSb superlattice (SL) samples where the strain is systematically changed from tensile to compressive regime is presented. The effect of the lattice mismatch between the substrate an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbe0871e6109a5ab3bdf3e6154a68165
https://doi.org/10.1016/j.apsusc.2015.11.244
https://doi.org/10.1016/j.apsusc.2015.11.244
WOS: 000423857500001
We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs
We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7e0db99086500fcf2c4476021b39f8f
https://hdl.handle.net/11421/16944
https://hdl.handle.net/11421/16944
WOS: 000360320000128
In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically alte
In this article, we report on the molecular beam epitaxy growth and characterization of a 140 period InAs/GaSb type-II superlattice structure designed for mid infrared detection. Thickness of a period was systematically alte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f94dd9ddb40489e010288da7d80178c1
https://aperta.ulakbim.gov.tr/record/80015
https://aperta.ulakbim.gov.tr/record/80015
WOS: 000362272600008
We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both struct
We report on the opto-electronic characterization of an InAs/GaSb superlattice (SL) midwave infrared p-i-n photodetector structure (pin-SL) in comparison with the same structure with no intentional doping (i-SL). Both struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f732c7aa0620d7de3a013c83edd78d3e
https://hdl.handle.net/11421/16945
https://hdl.handle.net/11421/16945
Publikováno v:
Semiconductor Science & Technology; Mar2018, Vol. 33 Issue 3, p1-1, 1p
Autor:
ÜNAL KAYA, Üyesi Hilal
Publikováno v:
Selcuk Law Review / Selçuk Üniversitesi Hukuk Fakültesi Dergisi; 2023, Vol. 31 Issue 3, p1185-1212, 28p
Publikováno v:
Semiconductor Science & Technology; Aug2015, Vol. 30 Issue 8, p1-1, 1p
Publikováno v:
Journal of Composite Materials; Aug2022, Vol. 56 Issue 20, p3185-3195, 11p
Autor:
ALBAYRAK, Hakan
Publikováno v:
Selcuk Law Review / Selçuk Üniversitesi Hukuk Fakültesi Dergisi; 2021, Vol. 29 Issue 3, p2414-2453, 39p