Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology

Autor: Gerardi, C. ^*, Melanotte, M., Crivelli, B., Zonca, R., Alessandri, M.

Publikováno v: In Micron 2000 31(3):291-297

Effects of nitridation by N2O or NO on the electrical properties of thin gate or tunnel oxides

Autor: Gerardi, C., Rossetti, T., Melanotte, M., Lombardo, S., Crupi, Isodiana

We have studied the effects of nitridation on the leakage current of thin (7-8 nm) gate or tunnel oxides. A polarity dependence of the tunneling current has been found this behavior is related to the presence of a thin silicon oxynitride layer at the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3658::a1a1d3be576fc94b44d20f3c1db0ba33
http://hdl.handle.net/10447/179598

Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices

Autor: Lombardo S, Gerardi C, Breuil L, Jahan C, Perniola L, Cina G, Corso D, Tripiciano E, Ancarani V, Iannaccone G, Iacono G, Bongiorno C, Garozzo C, Barbera P, Nowak E, Puglisi R, Costa G, Coccorese C, Vecchio M, Rimini E, Van Houdt J, De Salvo B, Melanotte M

Publikováno v: International Electron Devices Meeting, 2007. IEDM '07, 2007
info:cnr-pdr/source/autori:Lombardo S, Gerardi C, Breuil L, Jahan C, Perniola L, Cina G, Corso D, Tripiciano E, Ancarani V, Iannaccone G, Iacono G, Bongiorno C, Garozzo C, Barbera P, Nowak E, Puglisi R, Costa G, Coccorese C, Vecchio M, Rimini E, Van Houdt J, De Salvo B, Melanotte M/congresso_nome:International Electron Devices Meeting, 2007. IEDM '07/congresso_luogo:/congresso_data:2007/anno:2007/pagina_da:/pagina_a:/intervallo_pagine

Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::ae6da543fa2c443b568a90629763e29d
https://publications.cnr.it/doc/272208

Effects of distribuited charge storage in Nanocrystal Memory Cells

Autor: Lombardo S, Gerardi C, Corso D, Ammendola G, Crupi I, Melanotte M

Publikováno v: Non Volatile Semiconductor Memory Workshop, pp. 105–106, Monterey (California), 16-20 February 2003
info:cnr-pdr/source/autori:Lombardo S, Gerardi C, Corso D, Ammendola G, Crupi I, Melanotte M/congresso_nome:Non Volatile Semiconductor Memory Workshop/congresso_luogo:Monterey (California)/congresso_data:16-20 February 2003/anno:2003/pagina_da:105/pagina_a:106/intervallo_pagine:105–106

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::9a1cd7ba72f86d4a07a1a26bb3bf2f69
https://publications.cnr.it/doc/248480

Peculiar aspects of nanocrystal memory cells: data and extrapolations, Nanotechnology

Autor: Crupi I., Corso D., Ammendola G., Lombardo S., Gerardi C., DeSalvo B., Ghibaudo G., Rimini E., Melanotte M.

Publikováno v: IEEE transactions on nanotechnology 2 (2003): 319–323.
info:cnr-pdr/source/autori:Crupi I., Corso D., Ammendola G., Lombardo S., Gerardi C., DeSalvo B., Ghibaudo G., Rimini E., Melanotte M./titolo:Peculiar aspects of nanocrystal memory cells: data and extrapolations, Nanotechnology/doi:/rivista:IEEE transactions on nanotechnology/anno:2003/pagina_da:319/pagina_a:323/intervallo_pagine:319–323/volume:2

Nanocrystal memory cell are a promising candidate for the scaling of nonvolatile memories in which the conventional floating gate is replaced by an array of nanocrystals. The aim of this paper is to present the results of a thorough investigation of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::f745cea5b90ebecddcc3588772b6934f
http://www.cnr.it/prodotto/i/35331