Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Melanie R. Tuck"'
Publikováno v:
Journal of Microelectromechanical Systems. 18:671-678
This paper describes the development of aluminum nitride (AlN) resonant accelerometers that can be integrated directly over foundry CMOS circuitry. Acceleration is measured by a change in resonant frequency of AlN double-ended tuning-fork (DETF) reso
Publikováno v:
Sensors and Actuators A: Physical. :87-93
Microfabricated acoustic crystals have been designed and experimentally verified. The acoustic crystals are realized by including tungsten (W) scatterers in a SiO2 matrix. Wide frequency ranges where acoustic waves are forbidden to exist (acoustic ba
Autor:
Ihab El-Kady, Roy H. Olsson, Frederick B. McCormick, James G. Fleming, Mehmet F. Su, Melanie R. Tuck
Phononic crystals (or acoustic crystals) are the acoustic wave analogue of photonic crystals. Here a periodic array of scattering inclusions located in a homogeneous host material forbids certain ranges of acoustic frequencies from existence within t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3c8b13205ec1cc32acf143074580751
https://doi.org/10.2172/984095
https://doi.org/10.2172/984095
Publikováno v:
2009 IEEE International Ultrasonics Symposium.
Width extensional (WE) super high frequency (SHF) aluminum nitride (AlN) resonators have been fabricated using optical lithography. Solidly anchored WE resonators were shown to be superior to beam anchored resonators of the same size and it was verif
Publikováno v:
2009 IEEE International Ultrasonics Symposium.
Widely applied to RF filtering, AlN microresonators offer the ability to perform additional functions such as impedance matching and single-ended-to-differential conversion. This paper reports microresonators capable of transforming the characteristi
Publikováno v:
TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference.
Aluminum nitride (AlN) contour mode resonators have been of interest because of their high quality factor, low impedance, large number of frequencies on a single chip and compatibility with CMOS processes [1–3]. While AlN low insertion loss filters
Publikováno v:
2008 Solid-State, Actuators, and Microsystems Workshop Technical Digest.
Publikováno v:
2008 IEEE International Frequency Control Symposium.
This paper reports the development of narrow-bandwidth, post-CMOS compatible aluminum nitride (AlN) MEMS filters operating in the very (VHF) and ultra (UHF) high frequency bands. Percent bandwidths less than 0.1% are achieved utilizing a mechanically
Publikováno v:
2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum.
This paper reports post-CMOS compatible aluminum nitride (AlN) MEMS resonators, filters, and resonant sensors for the miniaturization of radio-frequency transceivers and sensor systems. Utilizing a resonator with two closely spaced modes, 2nd order M
Publikováno v:
TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.
A MEMS bulk wave acoustic bandgap has been designed and experimentally verified. The acoustic bandgaps are realized by including tungsten (W) scatterers in a SiO2 matrix. Wide frequency ranges where acoustic waves are forbidden to exist are formed du