Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Mejía-Salazar JR"'
Autor:
Lopez Medina JAA; Fisicoquim de Nanomateriales, Universidad Nacional Autónoma de México Centro de Nanociencias y Nanotecnología, Carretera Tijuana - Ensenada km 107, Ensenada, Baja California, 22800, MEXICO., Mejía-Salazar JR; Instituto Nacional de Telecomunicações, Av. João de Camargo, 510, Sala III-11, Santa Rita do Sapucai, 37540-000, BRAZIL., Carvalho WOF; Instituto de Engenharia de Sistemas e Tecnologias da Informação (IESTI), Federal University of Itajubá, Av. BPS, 1303, Itajuba, 37500-903, BRAZIL., Lopez Mercado CA; Universidad Autonoma de Baja California, Carr. Transpeninsular 3917, U.A.B.C., Mexicali, Baja California, 22860, MEXICO., Nedev N; Instituto de Ingeniería, Universidad Autónoma de Baja California, Calle Normal s/n Blvd. Benito Juárez Col. Insurgentes Este, Parcela 44, Mexicali, Baja California, 21100, MEXICO., Reyes Gómez F; National Institute of Telecommunications, Av. João de Camargo, 510 - Centro, Santa Rita do Sapucai, MG, 37540-000, BRAZIL., de Oliveira ON Jr; Institute of Physics of Sao Carlos, University of Sao Paulo, Sao Carlos, 13560-970, SP - BRAZIL, Sao Paulo, 05508-900, BRAZIL., Farías MH; Universidad Nacional Autonoma de Mexico Centro de Nanociencias y Nanotecnologia, Carr. Tijuana-Ensenada km 107, Ensenada, Baja California, 22860, MEXICO., Tiznado H; Universidad Nacional Autónoma de México Centro de Nanociencias y Nanotecnología, Km 107 Carretera Tijuana-Ensenada, Ensenada, B.C., C.P. 22800, Mexico, Ensenada, Baja California, 22800, MEXICO.
Publikováno v:
Nanotechnology [Nanotechnology] 2024 Sep 25. Date of Electronic Publication: 2024 Sep 25.
Broadband Enhancement of Magneto-Optical Effects in Hybrid Waveguide-Plasmonic Surfaces for Sensing.
Autor:
Carvalho WOF; Sao Carlos Institute of Physics, University of Sao Paulo, CP 369, 13560-970 São Carlos, São Paulo, Brazil., Spadoti DH; Federal University of Itajubá (UNIFEI), 37500-903 Itajubá, Minas Gerais, Brazil., Oliveira ON Jr; Sao Carlos Institute of Physics, University of Sao Paulo, CP 369, 13560-970 São Carlos, São Paulo, Brazil., Mejía-Salazar JR; National Institute of Telecommunications (Inatel), 37540-000 Santa Rita do Sapucaí, Minas Gerais, Brazil.
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Aug 14; Vol. 16 (32), pp. 42942-42946. Date of Electronic Publication: 2024 Aug 01.
Autor:
Carvalho WOF; Sao Carlos Institute of Physics, University of Sao Paulo, CP 369, São Carlos, São Paulo 13560-970, Brazil., Aiex Taier Filho MT; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí, Minas Gerais 37540-000, Brazil., Oliveira ON Jr; Sao Carlos Institute of Physics, University of Sao Paulo, CP 369, São Carlos, São Paulo 13560-970, Brazil., Mejía-Salazar JR; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí, Minas Gerais 37540-000, Brazil., Pereira de Figueiredo FA; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí, Minas Gerais 37540-000, Brazil.
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Aug 14; Vol. 16 (32), pp. 42828-42834. Date of Electronic Publication: 2024 Jul 30.
Publikováno v:
Optics letters [Opt Lett] 2024 Apr 15; Vol. 49 (8), pp. 1973-1976.
Autor:
Carvalho WOF; Sao Carlos Institute of Physics, University of Sao Paulo, CP 369, 13560-970 São Carlos, SP, Brazil., Oliveira ON Jr; Sao Carlos Institute of Physics, University of Sao Paulo, CP 369, 13560-970 São Carlos, SP, Brazil., Mejía-Salazar JR; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí, MG 37540-000, Brazil.
Publikováno v:
The Journal of chemical physics [J Chem Phys] 2024 Feb 21; Vol. 160 (7).
Autor:
Lobet M; Department of Physics and Namur Institute of Structured Materials, University of Namur, Rue de Bruxelles 61, 5000 Namur, Belgium.; John A. Paulson School of Engineering and Applied Sciences, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, United States., Kinsey N; Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, United States., Liberal I; Department of Electrical, Electronic and Communications Engineering, Institute of Smart Cities (ISC), Public University of Navarre (UPNA), Pamplona 31006, Spain., Caglayan H; Faculty of Engineering and Natural Science, Photonics, Tampere University, 33720 Tampere, Finland., Huidobro PA; Departamento de Física Téorica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain.; Instituto de Telecomunicações, Instituto Superior Técnico-University of Lisbon, Avenida Rovisco Pais 1, Lisboa, 1049-001, Portugal., Galiffi E; Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York 10027, United States., Mejía-Salazar JR; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí, 37540-000 MG, Brazil., Palermo G; Department of Physics, NLHT Lab, University of Calabria, 87036 Rende, Italy.; CNR NANOTEC-Institute of Nanotechnology, Rende (CS), 87036 Rende, Italy., Jacob Z; Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States.; Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States., Maccaferri N; Department of Physics, Umeå University, Linnaeus väg 24, 90187 Umeå, Sweden.; Department of Physics and Materials Science, University of Luxembourg, 162a avenue de la Faïencerie, L-1511 Luxembourg, Luxembourg.
Publikováno v:
ACS photonics [ACS Photonics] 2023 Oct 23; Vol. 10 (11), pp. 3805-3820. Date of Electronic Publication: 2023 Oct 23 (Print Publication: 2023).
Autor:
Damasceno GHB; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí37540-000, MG, Brazil., Carvalho WOF; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí37540-000, MG, Brazil., Cerqueira Sodré A Jr; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí37540-000, MG, Brazil., Oliveira ON Jr; Sao Carlos Institute of Physics, University of Sao Paulo, CP 369, Sao Carlos13560-970, SP, Brazil., Mejía-Salazar JR; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí37540-000, MG, Brazil.
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Feb 15; Vol. 15 (6), pp. 8617-8623. Date of Electronic Publication: 2023 Jan 23.
Publikováno v:
Optics letters [Opt Lett] 2023 Feb 01; Vol. 48 (3), pp. 680-683.
Autor:
Neto JVS; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí 37540-000, MG, Brazil., Carvalho WOF; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí 37540-000, MG, Brazil., Mejía-Salazar JR; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí 37540-000, MG, Brazil.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2022 Oct 25; Vol. 22 (21). Date of Electronic Publication: 2022 Oct 25.
Autor:
Damasceno GHB; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí 37540-000, MG, Brazil., Carvalho WOF; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí 37540-000, MG, Brazil., Mejía-Salazar JR; National Institute of Telecommunications (Inatel), Santa Rita do Sapucaí 37540-000, MG, Brazil.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2022 Sep 27; Vol. 22 (19). Date of Electronic Publication: 2022 Sep 27.