Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Meiying Kong"'
Publikováno v:
Arabian Journal of Geosciences. 14
Innovative industrial clusters are regarded as regional innovation centers and have become an important support for the national innovation strategy in China. However, in the actual development process of innovative industrial clusters, there are pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4b76ad038d9624cd7fc286af4fd6f2
https://doi.org/10.1007/s12517-021-06927-5
https://doi.org/10.1007/s12517-021-06927-5
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
Autor:
Xin Cao, Zhanping Zhu, Yong Chang, Yiping Zeng, Baoqiang Wang, Liang Pan, Xiaoguang Wang, Meiying Kong, Junhao Chu
Publikováno v:
Journal of Crystal Growth. 231:520-524
The photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed087a479ed846667bbaca61085fe31
https://doi.org/10.1016/s0022-0248(01)01529-9
https://doi.org/10.1016/s0022-0248(01)01529-9
Publikováno v:
Journal of Crystal Growth. :127-131
The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cfb3a0f8b9f708773584426d2e58286
https://doi.org/10.1016/s0022-0248(01)00650-9
https://doi.org/10.1016/s0022-0248(01)00650-9
Publikováno v:
Journal of Crystal Growth. :210-213
Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5be42e2462513c86501adbe1b97b269d
https://doi.org/10.1016/s0022-0248(01)00665-0
https://doi.org/10.1016/s0022-0248(01)00665-0
Publikováno v:
Journal of Crystal Growth. :371-375
Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0225f1814b577064929439e7c5d1aed0
https://doi.org/10.1016/s0022-0248(01)00726-6
https://doi.org/10.1016/s0022-0248(01)00726-6
Publikováno v:
Solid-State Electronics. 45:751-754
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the δ-doped AlGaAs layer to the InGaAs channel must be high. From the poin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f681dbe1beab21d934a04df21668c42a
https://doi.org/10.1016/s0038-1101(01)00032-6
https://doi.org/10.1016/s0038-1101(01)00032-6
Publikováno v:
Journal of Applied Physics. 86:1456-1459
Variable temperature photoluminescence (PL) measurements for In0.3Ga0.7As(6 nm)/GaAs(34 nm) quantum dot superlattices with a period of 20 and an In0.3Ga0.7As(6 nm)/GaAs(34 nm) reference single quantum well have been conducted. It is found that the te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8c9b79419102950593b0c4a3ccbba1
https://doi.org/10.1063/1.370912
https://doi.org/10.1063/1.370912
Autor:
Meiying Kong, Jian-Ping Zhang, Xiaobing Li, Jinmin Li, Yiping Zeng, Dianzhao Sun, Xiaoliang Wang, Lanying Lin
Publikováno v:
Journal of Crystal Growth. :429-432
We have found that GaN epilayers grown by NH3-source molecular beam epitaxy (MBE) contain hydrogen. Dependent on the hydrogen concentration, GaN on (0001) sapphire can be either under biaxially compressive strain or under biaxially tensile strain. Fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29be0d2747fffabbc9cd927406e9b39e
https://doi.org/10.1016/s0022-0248(98)01368-2
https://doi.org/10.1016/s0022-0248(98)01368-2
Publikováno v:
Physical Review B. 59:10119-10124
The energy bands of zinc-blende and wurtzite GaN are calculated with the empirical pseudopotential method, and the pseudopotential parameters for Ga and N atoms are-given. The calculated energy bands are in agreement with those obtained by the ab ini
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a8f263c639df43e10fed431877b0796
https://doi.org/10.1103/physrevb.59.10119
https://doi.org/10.1103/physrevb.59.10119
Autor:
Meiying Kong, Xiaoliang Wang, Jinmin Li, Dianzhao Sun, Lanying Lin, Jian-Ping Zhang, Yiping Zeng
Publikováno v:
Journal of Crystal Growth. 197:368-371
Photoluminescence measurements were performed on p-type co-doping effects of C, As, and Mg in GaN. The dopants were incorporated into GaN by ion implantation performed at 77 K. We find that the 3.42 eV luminescence line is sensitive to hole concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb9061855e8abdb255e7f31c33ba9471
https://doi.org/10.1016/s0022-0248(98)00883-5
https://doi.org/10.1016/s0022-0248(98)00883-5