Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Meixiong Zhao"'
Autor:
Xi Cao, Jack M. Higman, Rick Carter, O Sung Kwon, Joseph Versaggi, M. A. Karim, Randy W. Mann, Sanjay Parihar, Meixiong Zhao
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 28:1341-1344
In this brief, we investigate device variability in advanced fin field effect transistor (FinFET) static random access memory (SRAM) devices (12 and 7 nm) as a function of drain-to-source (Vds) bias. Drain-induced barrier lowering (DIBL) and the vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11d778152eec53c7d4a7cfccc1417f28
https://doi.org/10.1109/tvlsi.2020.2974202
https://doi.org/10.1109/tvlsi.2020.2974202
Autor:
Rick Carter, Joseph Versaggi, Jack M. Higman, Randy W. Mann, Shesh Mani Pandey, Meixiong Zhao, Sanjay Parihar, Carl J. Radens, Qun Gao, Ankur Arya
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 27:1819-1827
A previously unrecognized vertical-extrinsic device in advanced 7-nm FinFET SRAM structures is identified and characterized for the first time. The ON-current for this vertical-extrinsic device is modulated by gate bias and exhibits a process-depende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77d7ed39ce0662d0814bdbcfd9a24f0a
https://doi.org/10.1109/tvlsi.2019.2907594
https://doi.org/10.1109/tvlsi.2019.2907594
Autor:
Y.Z. Ma, Seng Keat Lim, Jeffrey Lam, Randy W. Mann, Paulo Chao, J. H. Yin, Sherwin Fernandes, Mark Dexter, Meixiong Zhao, Mark Tay, Dapeng Sun, Xuemei Liu, Qiushi Wang, Sheng Xie, Chong Khiam Oh
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
CMOS device miniaturization and the rapidly growing demand for mobile or power-aware systems have resulted in an urgent need to lower down power supply voltage (Vdd). However, soft fails at low Vdd in SRAM Array become a major yield limiter due to pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6aeb68f200d0b59968d8091a5931be0
https://doi.org/10.1109/asmc.2014.6846953
https://doi.org/10.1109/asmc.2014.6846953
Autor:
Yin, Jianhua, Fernandes, Sherwin, Ma, Yinzhe, Xie, Sheng, Xuemei Liu, Qiushi Wang, Dexter, Mark, Meixiong Zhao, Mann, Randy, Oh, Chong Khiam, Tay, Mark, Lim, Seng Keat, Dapeng Sun, Chao, Paulo, Lam, Jeffrey
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014); 2014, p351-356, 6p