Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Meiting Cui"'
Autor:
Kailu Liu, Xi He, Jingyu Huang, Simin Yu, Meiting Cui, Mengya Gao, Li Liu, Yu Qian, Ying Xie, Miao Hui, Yanli Hong, Xiaowei Nie
Publikováno v:
Clinical Epigenetics, Vol 15, Iss 1, Pp 1-18 (2023)
Abstract Polycystic ovary syndrome (PCOS) is an endocrine and metabolic disorder characterized by chronic low-grade inflammation. Previous studies have demonstrated that the gut microbiome can affect the host tissue cells’ mRNA N6-methyladenosine (
Externí odkaz:
https://doaj.org/article/c09c52b4a33d4804a2cc99a11048e78d
Publikováno v:
Journal of Zhejiang University (Medical Sciences). 52:33-45
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789819904501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4299ed929e29646097950e6a1bf909f
https://doi.org/10.1007/978-981-99-0451-8_101
https://doi.org/10.1007/978-981-99-0451-8_101
Autor:
Jingyu Huang, WenXiu Xie, Xi He, Meiting Cui, Mengting Hu, Kailu Liu, Xiaowei Nie, Weijie Yang
Publikováno v:
Journal of Cellular and Molecular Medicine
Ovarian hyperstimulation syndrome (OHSS) is one of the most dangerous iatrogenic complications in controlled ovarian hyperstimulation (COH). The exact molecular mechanism that induces OHSS remains unclear. In recent years, accumulating evidence found
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Publikováno v:
2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS).
Publikováno v:
2019 IEEE International Conference on Sustainable Energy Technologies (ICSET).
This paper described a three-level circuit for a power distribution system used in intelligent micro-grid and combines an ordinary T-type three-level circuit with an RBIGBT. The topology of the circuit was firstly introduced in this paper, then the a
Publikováno v:
2019 IEEE International Conference on Sustainable Energy Technologies (ICSET).
The parallel connection of multi-system matrix converters is an important technology to ensure the reliable operation of smart grids, and it is one of the hotspots of current research. In this paper, the three-phase power supplies, control module and
Publikováno v:
Journal of Power Electronics. 16:84-92
Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition a
Publikováno v:
Proceedings of the 2018 3rd International Conference on Electrical, Automation and Mechanical Engineering (EAME 2018).