Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Meile Wu"'
Publikováno v:
IEEE Access, Vol 11, Pp 104568-104578 (2023)
In this work, a high-performance nanoscale complementary low Schottky barrier (CLSB) nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on dual metal silicide source/drain (S/D) contacts (CLSB-NBRFET) is proposed. It is d
Externí odkaz:
https://doaj.org/article/adc952e39cc547efb638befc8d810743
Publikováno v:
Chemosensors, Vol 12, Iss 3, p 32 (2024)
In this paper, a field effect transistor (FET)-type sensor with Pt-decorated In2O3 (Pt-In2O3) nanoparticles is fabricated for detecting H2 gas at room temperature. A pulsed measurement method is adopted to continuously alternate between pre-biasing t
Externí odkaz:
https://doaj.org/article/fc843eb22a8d499795ebf662a8e886f0
Publikováno v:
PLoS ONE, Vol 18, Iss 5, p e0285320 (2023)
In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more
Externí odkaz:
https://doaj.org/article/44479dafcc3c487894c60f3dbad1b139
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Abstract A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS i
Externí odkaz:
https://doaj.org/article/678371e3f1314d6c801f2f1c9d6e8e90
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-8 (2020)
Abstract In this work, Pt-doped In2O3 nanoparticles (Pt-In2O3) were inkjet printed on a FET-type sensor platform that has a floating gate horizontally aligned with a control gate for humidity detection at room temperature. The relative humidity (RH)-
Externí odkaz:
https://doaj.org/article/0f62b96d7ab44e4dbb6ffac8bb3480d3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 976-980 (2020)
In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Different from Schottky barrier (SB) MOSFET which use lower Schottk
Externí odkaz:
https://doaj.org/article/e58deabac7fa419ab17dff1e77f10b00
Publikováno v:
Sensors, Vol 22, Iss 19, p 7306 (2022)
Sensitive H2 sensors at low concentrations and room temperature are desired for the early warning and control of hydrogen leakage. In this paper, a resistive sensor based on Pt-doped In2O3 nanoparticles was fabricated using inkjet printing process. T
Externí odkaz:
https://doaj.org/article/d63ccbcb05a24f0ab34b0fdb11827f3b
Publikováno v:
Materials Research Express, Vol 7, Iss 9, p 095002 (2020)
Recent progresses in the synthesis of large-area and stable atomically thin MoS _2 have evoked enormous interest toward the future applications of two-dimensional (2D) electronics. Although considerable theoretical researches have been conducted to e
Externí odkaz:
https://doaj.org/article/467dea46bcd64da9be4b190d802b984a
Publikováno v:
IEEE Sensors Journal. 22:90-98
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::befdb5463e792aaeb1a20ec58d1c4177
https://doi.org/10.1109/jsen.2021.3131196
https://doi.org/10.1109/jsen.2021.3131196
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Nanoscale Research Letters
Nanoscale Research Letters
A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b29dfc4e9372ecc229fd9aa530701860
https://doaj.org/article/678371e3f1314d6c801f2f1c9d6e8e90
https://doaj.org/article/678371e3f1314d6c801f2f1c9d6e8e90