Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Meilan Hao"'
Autor:
Shuzhe Mei, Quan Wang, Meilan Hao, Jiankai Xu, Haibo Yin, Hongling Xiao, Chun Feng, Lijuan Jiang, Xiaoliang Wang, Fengqi Liu, Xiangang Xu, Zhanguo Wang
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085114-085114-9 (2018)
The temperature uniformity and heating efficiency in a high-temperature epitaxial growth system were investigated by modeling and simulating. The finite element method (FEM) was used to calculate the distribution of magnetic field and temperature fie
Externí odkaz:
https://doaj.org/article/2543e2236e50401596e52e8ac43a1f6e
Publikováno v:
Neurocomputing. :126284
Autor:
Zhanguo Wang, Quan Wang, Jiang Lijuan, Hongling Xiao, Meilan Hao, Cuimei Wang, Fengqi Liu, Chun Feng, Xiaoliang Wang, Xiangang Xu, Changxi Chen
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:7479-7483
Autor:
Xiangang Xu, Chun Feng, Quan Wang, Jiang Lijuan, Xiaoliang Wang, Meilan Hao, Cuimei Wang, Hongling Xiao, Changxi Chen, Zhanguo Wang, Fengqi Liu
Publikováno v:
Nanoscience and Nanotechnology Letters. 10:185-189
Publikováno v:
Plasma Science and Technology. 13:50-54
Since processed substrates usually exhibit nonplanar surface structures in micro-electro-mechanical-systems (MEMS) etching, a two-dimensional (2D) fluid model is developed to simulate the characteristics of the sheath near a conductive substrate with
Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling
Autor:
Zhanguo Wang, Meilan Hao, Chun Feng, Xiangang Xu, Fengqi Liu, Jiang Lijuan, Mei Shuzhe, Jiankai Xu, Xiaoliang Wang, Hongling Xiao, Quan Wang
Publikováno v:
Chinese Physics Letters. 35:098101
Autor:
Jiang Lijuan, Jiankai Xu, Xiangang Xu, Meilan Hao, Quan Wang, Hongling Xiao, Fengqi Liu, Chun Feng, Mei Shuzhe, Xiaoliang Wang, Zhanguo Wang, Haibo Yin
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085114-085114-9 (2018)
The temperature uniformity and heating efficiency in a high-temperature epitaxial growth system were investigated by modeling and simulating. The finite element method (FEM) was used to calculate the distribution of magnetic field and temperature fie
Autor:
Meilan Hao, Jiang Lijuan, Cuimei Wang, Hongling Xiao, Xiang-Mi Zhan, Zhanguo Wang, Chun Feng, Wei Li, Quan Wang, Xiaoliang Wang
Publikováno v:
Chinese Physics Letters. 34:047301
Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic ac
Publikováno v:
Plasma Science & Technology; Apr2014, Vol. 16 Issue 4, p320-323, 4p
Publikováno v:
Plasma Science & Technology; Feb2011, Vol. 13 Issue 1, p50-54, 5p