Zobrazeno 1 - 6
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pro vyhledávání: '"Mei Hsuan Lin"'
Publikováno v:
Journal of Electronic Materials. 37:624-627
Tungsten, stoichiometric W2N, and nitrogen-rich W2N films were used as Schottky contacts on AlGaN/GaN heterostructures. The nitrogen content in the film was controlled by varying the nitrogen-to-argon gas flow ratio during the reactive sputter deposi
Publikováno v:
Post-Communist Economies. 19:343-357
This article undertakes an empirical examination of the impact of foreign bank entry on the operational performance of the Chinese banking sector, placing particular emphasis on the unique features of China's banking industry as it undergoes the proc
Autor:
Mei-Hsuan Lin, 林渼璇
95
Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance. The recess in GaAs based HEMTs is done using wet chemical etching. On
Gate recess is widely used in III-V compound transistors to modify the threshold voltage and optimize the device performance through adjusting the gate to channel distance. The recess in GaAs based HEMTs is done using wet chemical etching. On
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/35228191465753344505
Autor:
Mei-Hsuan, Lin.
Thesis (M.A.)--Tamkang University Dept. of International Trade.
Non-Latin script record Includes bibliographical references.
Non-Latin script record Includes bibliographical references.
Autor:
Mei-Hsuan Lin, 林枚萱
94
In the 1980s, China had eased of barriers to the banking industry for foreign banks. In the way, foreign banks can get the chance to participate in China’s financial market. The purpose of this study is to discuss the effect of foreign entr
In the 1980s, China had eased of barriers to the banking industry for foreign banks. In the way, foreign banks can get the chance to participate in China’s financial market. The purpose of this study is to discuss the effect of foreign entr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/03126227571201226018
Publikováno v:
Journal of Electronic Materials; May2008, Vol. 37 Issue 5, p624-627, 4p, 1 Chart, 4 Graphs