Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Mehrotra, Saumitra"'
Autor:
MEHROTRA, SAUMITRA R.
Silicon planar MOSFETs are approaching their scaling limits. New device designs are being explored to replace the existing planar technology. Among the possible new device designs are Double Gate (DG) FETs, FinFETs, Tri-Gate FETs and Omega- Gate FETs
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1186419835
Autor:
Mehrotra, Saumitra, Kim, SungGeun, Kubis, Tillmann, Povolotskyi, Michael, Lundstrom, Mark, Klimeck, Gerhard
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can
Externí odkaz:
http://arxiv.org/abs/1303.5458
Publikováno v:
Appl. Phys. Lett. 98, 173504 (2011)
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been treated in an empirical fashion with a fitting parameter. We present a the
Externí odkaz:
http://arxiv.org/abs/1102.4805
Autor:
Paul, Abhijeet, Tettamanzi, Giuseppe C., Lee, Sunhee, Mehrotra, Saumitra, Colleart, Nadine, Biesemans, Serge, Rogge, Sven, Klimeck, Gerhard
Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical Tight-Binding (TB) calculations, this technique can be used to under
Externí odkaz:
http://arxiv.org/abs/1102.0140
Autor:
Tettamanzi, Giuseppe Carlo, Paul, Abhijeet, Lee, Sunhee, Mehrotra, Saumitra R., Collaert, Nadine, Biesemans, Serge, Klimeck, Gerhard, Rogge, Sven
The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods
Externí odkaz:
http://arxiv.org/abs/1011.2582
Autor:
Vedula, Ravi Pramod, Mehrotra, Saumitra, Tillmann, Kubis, Povolotskyi, Michael, Klimeck, Gerhard, Strachan, Alejandro
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 17, p174312-1-174312-7, 7p, 1 Diagram, 4 Graphs
Autor:
Mehrotra, Saumitra, Kim, SungGeun, Kubis, Tillmann, Povolotskyi, Michael, Lundstrom, Mark S., Klimeck, Gerhard
Publikováno v:
Birck and NCN Publications
As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (L-g) are scaled to lengths shorter than L-g < 8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario, a heavier transport mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::ec2cbad7862ebdd7cb6c93d63c98a3ad
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2426&context=nanopub
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2426&context=nanopub
Autor:
Mehrotra, Saumitra, Povolotskyi, Michael, Law, Jeremy, Kubis, Tillmann, Klimeck, Gerhard, Rodwell, Mark
Publikováno v:
Birck and NCN Publications
We propose and analyze a high-current III-V transistor design using electron transport in the Gamma- and L-valleys of (111) GaAs. Using sp(3)d(5)s* empirical tight-binding model for band-structure calculations and the top-of-the-barrier transport mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::9d2b1e1bffd08ef6645cd417f9d3fa5f
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2319&context=nanopub
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2319&context=nanopub
Publikováno v:
Birck and NCN Publications
Introduction: Ge exhibits a high bulk hole mobilty making it an attractive channel material for pMOSFET devices [1,2]. For improving the device performance and suppressing short channel effects ultra-thin-body (UTB) Ge-on-insulator ( GeOI) structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::cd45ba9fe264fb9a1fa259318a109e43
http://docs.lib.purdue.edu/nanopub/896
http://docs.lib.purdue.edu/nanopub/896
Publikováno v:
Birck and NCN Publications
SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into complementary metal-oxide semiconductor technology. However, alloy scattering has till now been treated in an empirical fashion with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::1040c873f3533a8fae9ee74547528191
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1726&context=nanopub
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1726&context=nanopub